@conference{1239411,
  author = {Stephen Moxim and James Ashton and Mark Anders and Nathaniel Lawson and Jason Ryan},
  title = {Relationship between Trapping Centers, Charge Pumping, and Leakage Currents in Hot-Carrier-Stressed Si/SiO2/HfO2 Transistors},
  year = {2024},
  month = {2024-03-27 04:03:00},
  publisher = {Proceedings of the International Integrated Reliability Workshop, Fallen Leaf Lake, CA, US},
  url = {https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=956850},
  doi = {https://doi.org/10.1109/IIRW59383.2023.10477645},
  language = {en},
}