CMOS Thermal Ox and Diffusion Furnace: Tystar Tytan 2000

CORAL Names:  CMOS Wet Ox, CMOS Dry Ox, Boron Doping (P-type), Phos. Doping (N-Type)

This four-stack furnace bank is used for the thermal growth of silicon dioxide and diffusion by solid source.

• Silicon Dioxide Growth
• • Wet Oxide (Tube 1)-typically used for field isolation, masking layers, oxides greater than 120 nm, gate dielectric studies, and optical applications
  • Dry Oxide (Tube 2)-CMOS gate growth, slow controlled growth, oxides less than 120 nm
    
• Boron Solid Source Diffusion (Tube 3)
• • Wafer doping technique for P-type applications
    
• Phosphorus Solid Source Diffusion (Tube 4)
• • Wafer doping for N-type applications
    
• 3", 4", and 6" wafers
• Maximum wafer thickness:  2.5 mm
• The dry oxide tube (Tube 2) and the wet oxide tube (Tube 1) are for CMOS applications only
• Requires quarterly monitoring and monthly Trans-LC cleans
• No Metals
• Use only teflon tweezers, green wafer tweezers, or vacuum want
• RCA Cleaning required before processing
• Silicon Wafers Only
• Max. Temp 1100 °C
  

• Etch masking layers
• Insulation layers
• Sub-2nm gate dielectric