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Deep RIE: Unaxis SHUTTLELINE DSEII

Description:

CORAL Name:  Unaxis Deep Si Etcher

A tool for etching deep Si-trench by "Bosch" process on planar substrates up to 150mm in diameter

Specifications / Capabilities:

  • Etching of Silicon at rates from 1 μm/min to 15 μm/min
  • Selectivity to SiO2 ≥ 100 to 1
  • Selectivity to Photoresist ≥ 40 to 1
  • ICP: 2.4 MHz 250w
  • RF:  13.56 MHz 300w
  • Gases:  C4F8, SF6, O2, N2, Ar

Scientific Opportunities / Applications:

Deep Si etch

Access Information:

Access to this tool requires that you have attended NanoFab safety orientation, passed the safety test, and have been properly trained on the tool. If you have any questions, please contact the NanoFab User Coordinator, or the tool contact person.

NANOFAB USER MANUAL

SCHEDULE TRAINING

deep_etcher

Operating Schedule:

Access to this machine follows standard NanoFab operating hours (7am - 7pm Monday - Friday).  Out of hours access requires prior approval by the NanoFab Manager.

Contact

Name: Lei Chen
Phone: 301.975.2908
Email: nanofab_dryetch@nist.gov
Address:
100 Bureau Drive, Stop 6201
Gaithersburg, MD 20899-6201