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JEOL E-beam

Description:

CORAL Name:  JEOL E-beam

This system enables direct writing of advanced nanolithography patterns on wafers

Specifications / Capabilities:

  • 25, 50, 100 kV accelerating voltage
  • 2 nm minimum spot size
  • 12 MHz scanning rate
  • 19 bit DAC resolution
  • 0.5 mm max write field (4th lens)
  • 150 x 190 mm write area
  • 0.62 nm stage movement precision
  • <25 nm stitching & overlay accuracy

Access Information:

Access to this tool requires that you have attended NanoFab safety orientation, passed the safety test, and have been properly trained on the tool. If you have any questions, please contact the NanoFab User Coordinator, or the tool contact person.

SCHEDULE TRAINING

jeol_ebeam

Operating Schedule:

Access to this machine follows standard NanoFab operating hours (7am - 7pm Monday - Friday).  Out of hours access requires prior approval by the NanoFab Manager.

Contact

Name: Marc Cangemi
Phone: 301.975.5993
Email: nanofab_litho@nist.gov
Address:
100 Bureau Drive, Stop 6201
Gaithersburg, MD 20899-6201