NIST logo

Focused Ion Beam (FIB) Nanofabrication and Characterization

Perform nanoscale machining and structural and chemical characterization with one of our three dual-beam FIBs, each combining a focused ion beam with a scanning electron microscope and gas injection system. 


FEI FIB #1: FEI Helios 650

These instruments combine a monochromated Field Emission Scanning Electron Microscope with a Tomahawk Focused Ion Beam column for fast, precise 2D and 3D characterization of samples ranging from the micro through nano scales.


FEI Helios 650
  • SEM Resolution: sub-nanometer from 1-30 kV
  • FIB Resolution: 2.5 nm at 30 kV
  • High-performance Secondary Ion Detector
  • Elstar in-lens detector (SE and BSE)
  • STEM detector with BF/DF/HAADF segments
  • Beam deceleration for 50 V effective landing voltage
  • 5-axis stage with 150 mm XY range and full rotation for 6-inch wafers
  • Kleindiek In-situ probe system for nanopositioning and electrical measurements
Gas Injection System (GIS) Chemistries:
  • Platinum Deposition
  • Gold Deposition
  • Carbon Deposition
  • Insulator Deposition
  • Selective Carbon Etch
  • Insulator Enhanced Etch
Applications: Nanometer scale patterning, 3D tomography, materials characterization, nanoprototyping, in-situ electrical measurement, TEM lamella preparation, failure analysis, circuit editing, compositional analysis/mapping


FEI FIB #2: FEI Helios 650

These instruments combine a monochromated Field Emission Scanning Electron Microscope with a Tomahawk Focused Ion Beam column for fast, precise 2D and 3D characterization of samples ranging from the micro through nano scales.


FEI Helios 650
  • SEM Resolution: sub-nanometer from 1-30 kV
  • FIB Resolution: 2.5nm at 30 kV
  • High-performance Secondary Ion Detector
  • Elstar in-lens detector (SE and BSE)
  • STEM detector with BF/DF/HAADF segments
  • Beam deceleration for 50 V effective landing voltage
  • 5-axis stage with 150 mm XY range and full rotation for 6-inch wafers
  • High-efficiency Oxford Instruments X-Max 80 mm2 SDD-EDS Detector
  • Kleindiek In-situ probe system for nanopositioning and electrical measurements
  • Oxford Instruments Electron Backscatter Diffraction (EBSD) provides material crystallographic information
Gas Injection System (GIS) Chemistries:
  • Platinum Deposition
  • Gold Deposition
  • Carbon Deposition
  • Insulator Deposition
  • Selective Carbon Etch
  • Insulator Enhanced Etch
Applications: Nanometer scale patterning, 3D tomography, materials characterization, nanoprototyping, in-situ electrical measurement, TEM lamella preparation, failure analysis, circuit editing, compositional analysis/mapping


Zeiss NVision 40

This workstation combines Focused Ion Beam and Gemini Scanning Electron Microscope columns to enable the study of nanoscale-level materials and physical failure analysis in industrial production as well as state-of-the-art research in Nanotechnology, Materials and Life Sciences.


Focused Ion Beam - Zeiss NVision 40
  • SEM Resolution: 1.1 nm @ 20 kV, 2.5 nm @ 1 kV
  • FIB Resolution: 4.0 nm @ 30 kV
  • SEM Magnification: 30x – 900 kx
  • FIB Magnification: 475x – 500 kx
  • Gas Injection : 4 Channel
    • Up to two different solid state precursors
    • Up to four different gaseous or liquid precursors
    • Wide range of precursors options including W, Pt, C, and silicon oxide insulator deposition
  • Detectors
    • In-column EsB and BSE
    • In-lens: SE detector
    • Chamber: Everhart Thornley type SE detector
  • Chamber
    • Two specimen exchange positions
    • 7 additional available ports for upgrade options
  • 3D Software for Image Reconstruction
Applications: Nanometer scale patterning and etching of materials, micromanipulation and TEM sample prep; can accommodate substrates from small pieces to 100 mm wafers.

Demonstrated use: Photonic crystals, MEMs, cross-sectioning of bilayer materials.

Go to top of page