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Chip-based devices known as frequency combs, which measure the frequency of light waves with unparalleled precision, have revolutionized time keeping, the
The Office of Weights and Measures (OWM) welcomes four 2023 NIST Summer Undergraduate Research Fellowship (SURF) Program research fellows to our Gaithersburg
NIST’s Material Measurement Laboratory and Communications Technology Laboratory are developing a new spectroscopy for intermolecular interactions. The team is
With the rise of artificial intelligence and its insatiable demand for low-energy, high performance computing, research is accelerating into novel nanodevices
Electricity meters today face unprecedented challenges, from distorted waveforms on the grid, bidirectional metering for renewables, and the use of meters as
This project aims to provide the world's best basis for accurate impedance measurements by tying the U.S. legal system of electrical units to the International
Anhang Li, Jeongsup Lee, Prashansa Mukim, Brian Hoskins, Pragya Shrestha, David Wentzloff, David Blaauw, Dennis Sylvester, Mehdi Saligane
This paper presents a fully integrated recursive successive-approximation switched capacitor (RSC) DC-DC converter implemented using an automatic cell-based
Robots excel at manipulating objects with 6 degree of freedom movement. A combination of well-defined kinematics, optimized control loops, and robust mechanical
Rob Jones, Jerome Cheron, Bryan Bosworth, Ben Jamroz, Dylan Williams, Miguel Urteaga, Ari Feldman, Peter Aaen
In this paper, we investigate the effect of two calibration errors, probe placement and capacitance per unit length, on transistor characterization from 220 GHz
Description High-throughput (combinatorial) metrologies have evolved as a useful approach to rapidly determine the composition-structure-property relationships
Description The Seebeck coefficient is a widely measured transport property that provides fundamental information on charge carrier transport and the electronic
The Applied Physics Division utilizes a fully automated, dual-chamber molecular beam epitaxy (MBE) system for the growth of advanced, compound semiconductor