The Journal of Research of NIST reports NIST research and development in metrology and related fields of: physical science, engineering, applied mathematics, statistics, biotechnology, information technology.
For additional information see: About the Journal
Volume 100 |
ISSN: 1044-677X |
Issue 1 |
Issue 2 |
Issue 3 |
Issue 4 |
Issue 5 |
Issue 6 |
Preparation and Calibration of Carrier-Free 209Po Solution Standards, p. 1
http://dx.doi.org/10.6028/jres.100.002
Spectral Radiance of a Large-Area Integtrating Sphere Source, p. 37
http://dx.doi.org/10.6028/jres.100.003
Deposition of Diamond Films in a Closed Hot Filament CVD System, p. 43
http://dx.doi.org/10.6028/jres.100.004
Variances in the Measurement of Ceramic Powder Properties, p. 51
http://dx.doi.org/10.6028/jres.100.005
On the Applications of Discontinuous Bessel Integrals to Chronoamperometry, p. 61
http://dx.doi.org/10.6028/jres.100.006
Third International Conference on Information and Knowledge Management (CIKM-94), p. 67
http://dx.doi.org/10.6028/jres.100.007
Federal Wireless Users' Forum Workshop, p. 71
http://dx.doi.org/10.6028/jres.100.008
Workshop on Water: Its Measurement and Control in Vacuum, p. 75
http://dx.doi.org/10.6028/jres.100.009
Manufacturing Technology Conference: Toward a Common Agenda, p. 83
http://dx.doi.org/10.6028/jres.100.010
News Briefs, p. 93
http://dx.doi.org/10.6028/jres.100.011
Low-Temperature Properties of Silver, p. 119
http://dx.doi.org/10.6028/jres.100.012
Mixing Plate-Like and Rod-Like Molecules With Solvent: A Test of Flory-Huggins Lattice Statistics, p. 173
http://dx.doi.org/10.6028/jres.100.013
News Briefs, p. 187
http://dx.doi.org/10.6028/jres.100.014
Determining the Magnetic Properties of 1 kg Mass Standards, p. 209
http://dx.doi.org/10.6028/jres.100.015
1993 Intercomparison of Photometric Units Maintained at NIST (USA) and PTB (Germany), p. 227
http://dx.doi.org/10.6028/jres.100.016
Determination of the Transmittance Uniformity of Optical Filter Standard Reference Materials, p. 241
http://dx.doi.org/10.6028/jres.100.017
Low-Frequency Model for Radio-Frequency Absorbers, p. 257
http://dx.doi.org/10.6028/jres.100.018
Using Quantized Breakdown Voltage Signals to Determine the Maximum Electric Fields in a Quantum Hall Effet Sample, p. 269
http://dx.doi.org/10.6028/jres.100.019
High Accuracy Measurement of Aperture Area Relative to a Standard Known Aperture, p. 277
http://dx.doi.org/10.6028/jres.100.020
Letter to the Editor New IUPAC guidelines for the reporting of stable hydrogen, carbon, and oxygen isotope-ratio data, p. 285
http://dx.doi.org/10.6028/jres.100.021
Quest for Excellence VII- Conference Report, p. 287
http://dx.doi.org/10.6028/jres.100.022
17th National Computer Security Conference- Conference Report, p. 301
http://dx.doi.org/10.6028/jres.100.023
News Briefs, p. 311
http://dx.doi.org/10.6028/jres.100.024
Front Cover–Title Page–Contents
http://dx.doi.org/10.6028/jres.100.001
The Gaseous Electronics Conference RF Reference Cell–An Introduction, p. 327
http://dx.doi.org/10.6028/jres.100.025
Current and Voltage Measurements in the Gaseous Electronics Conference RF Reference Cell, p. 341
http://dx.doi.org/10.6028/jres.100.026
Optical Emission Spectroscopy on the Gaseous Electronics Conference RF Reference Cell, p. 353
http://dx.doi.org/10.6028/jres.100.027
Optical Diagnostics in the Gaseous Electronics Conference RF Reference Cell, p. 373
http://dx.doi.org/10.6028/jres.100.028
Studies of Ion Kinetic-Energy Distributions in the Gaseous Electronics Conference RF Reference Cell, p. 383
http://dx.doi.org/10.6028/jres.100.029
Microwave Diagnostic Results from the Gaseous Electronics Conference RF Reference Cell, p. 401
http://dx.doi.org/10.6028/jres.100.030
Langmuir Probe Measurements in the Gaseous Electronics Conference RF Reference Cell, p. 415
http://dx.doi.org/10.6028/jres.100.031
An Inductively Coupled Plasma Source for the Gaseous Electronics Conference RF Reference Cell, p. 427
http://dx.doi.org/10.6028/jres.100.032
Reactive Ion Etching in the Gaseous Electronics Conference RF Reference Cell, p. 441
http://dx.doi.org/10.6028/jres.100.033
Dusty Plasma Studies in the Gaseous Electronics Conference RF Reference Cell, p. 449
http://dx.doi.org/10.6028/jres.100.034
One-Dimensional Modeling Studies of the Gaseous Electronics Conference RF Reference Cell, p. 463
http://dx.doi.org/10.6028/jres.100.035
Two-Dimensional Self-Consistent Radio Frequency Plasma Simulations Relevant to the Gaseous Electronics Conference RF Reference Cell, p. 473
http://dx.doi.org/10.6028/jres.100.036
Forty-Seventh Annual Gaseous Electronics Conference- Conference Report, p. 495
http://dx.doi.org/10.6028/jres.100.037
News Briefs, p. 501
http://dx.doi.org/10.6028/jres.100.038
Low Electrolytic Conductivity Standards, p. 521
http://dx.doi.org/10.6028/jres.100.039
Potential and Current Distributions Calculated Across a Quantum Hall Effet Sample at Low and High Currents, p. 529
http://dx.doi.org/10.6028/jres.100.040
Microform Calibration Uncertainties of Rockwell Diamond Indenters, p. 543
http://dx.doi.org/10.6028/jres.100.041
Performance Measures for Geometric Fitting in the NIST Algorithm Testing and Evaluation Program for Coordinate Measurement Systems, p. 563
http://dx.doi.org/10.6028/jres.100.042
A Study on the Reuse of Plastic Concrete Using Extended Set-Retarding Admixtures, p. 575
http://dx.doi.org/10.6028/jres.100.043
A Third Generation Water Bath Based Blackbody Source, p. 591
http://dx.doi.org/10.6028/jres.100.044
COMPASS '95 Tenth Annual Conference on Computer Assurance- Conference Report, p. 601
http://dx.doi.org/10.6028/jres.100.045
News Briefs, p. 607
http://dx.doi.org/10.6028/jres.100.046
Calibration of Electret-Based Integral Radon Monitors Using NIST Polyethylene-Encapsulated 226Ra/222Rn Emanation (PERE) Standards, p. 629
http://dx.doi.org/10.6028/jres.100.047
Microstructural Characterization of Cobalt-Tungsten Coated Graphite Fibers, p. 641
http://dx.doi.org/10.6028/jres.100.048
On Using Collocation in Three Dimensions and Solving a Model Semiconductor Problem, p. 661
http://dx.doi.org/10.6028/jres.100.049
Precision Tests of a Quantum Hall Effect Device DC Equivalent Circuit Using Double-Series and Triple-Series Connections, p. 677
http://dx.doi.org/10.6028/jres.100.050
Analysis of the (5d2+5d6s)-5d6p Transition Arrays of Os VII and Ir VIII, and the 6s 2S-6p 2P Transitions of Ir IX, p. 687
http://dx.doi.org/10.6028/jres.100.051
Application Portability Profile and Open System Environment User's Forum- Conference Report, p. 699
http://dx.doi.org/10.6028/jres.100.052
International Workshop on Semiconductor Characterization: Present Status and Future Needs- Conference Report, p. 711
http://dx.doi.org/10.6028/jres.100.053
Metrology Issues in Terahertz Physics and Technology- Conference Report, p. 717
http://dx.doi.org/10.6028/jres.100.054
News Briefs, p. 725
http://dx.doi.org/10.6028/jres.100.055

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