Presentations from the 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics

Because of the large interest in the talks given at this Conference and as a service to the semiconductor community, the organizers have made the slides from many of the talks presented available here. These slides should be considered the sole property of the speaker. Please do not alter or reproduce any of the slides presented.

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The Conference organizers would like to thank each of the speakers who have made their slides available!

• New Materials and Structures Based on Spin, Charge and Wavefunction Phase Control
  Sanjay Banerjee, UT Austin
• Nanoscale Contact Formation Dynamics
  John Boland, Trinity College
• Multiple Modulation and Higher Harmonic SPM Probing Complex Properties
  Dawn Bonnell, Univ. of PA
• CEA-LETI as a European Model of Cooperation in Nanoelectronics
  Michel Brillouett, CEA/LETI
• Doping of Nanostructures
  Jim Chelikowsky, UT Austin
• Review of NSOM Microscopy for Materials
  Yannick De Wilde, Groupe de Physique des Materiaux, CNRS, France
• The Impact of Nano-Sized Dimensions on Characterization and Metrology
  Alain Diebold, SEMATECH
• Raman Antenna Effect in Semiconducting Nanowires
  Peter Eklund, Penn State
• 3D Imaging of Nanostructures Using Electron Tomography, and the Impact of Aberration Correctors
  Peter Ercius, Cornell
• Metrology for Emerging Research Materials and Devices
  Mike Garner, Intel
• Analytics and Metrology for Locally Strained Silicon in CMOS Devices
  Michael Hecker, AMD Dresden/Germany
• From Microchips to Nanochips: How We Got Here...and...Where Do We Go From Here
  Dan Hutcheson, VLSI Research
• NIST: Promoting U.S. Innovation and Industrial Competitiveness
  William Jeffrey, Director, NIST
• Metrology and Characterization for Extending Silicon CMOS
  Toshihiko Kanayama, AIST, Onogawa, Japan
• LEAP Tomography and the Rapidly Expanding World of Microelectronic Applications
  Tom Kelly, Imago
• Advanced Metrology for Nanoelectronics at the National Institute for Standards and Technology
  Steve Knight, NIST
• What Is 3D IC Integration and What Metrology Is Needed?
  Patrick Leduc, CEA-LETI
• Nanoelectronics: Computation and Metrology
  Mark Lundstrom, Purdue
• Optical Characterization Methods for Identifying Charge Trapping States in Thin Dielectric Films
  Jimmy Price, SEMATECH
• Atom Probe Tomography for Semiconductor Applications
  Paul Ronsheim, IBM
• Self-assembled Monolayers: Surface Engineering and Characterization
  Fabrice Sinapi, IMEC Leuven/Belgium
• Metrology and Precision for Nanoscale Manufacturing: Current Trends and Future Directions in Nanoelectronics
  Tom Theis, IBM
• Advanced CMOS and Related Characterization in MIRAI Project
  Hisatsune Watanabe, President and CEO, Selete
• The Semiconductor Industry's Nanoelectronics Research Initiative
  Jeff Welser, IBM
• Quantum Information Science, NIST, and Future Technological Implications
  Carl Williams, NIST
• EUV Lithography: New Metrology Challenges
  Obert Wood, Advanced Micro Devices
• Metrology for Silicide Contacts for Future CMOS
  Stefan Zollner, Freescale