2013 FCMN Presentations
Invited Oral Presentations
Poster Presentations
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Conference Opening
Conference Opening
David Seiler, NIST, Conference Chair
Introduction and Welcome to NIST
Willie May, Associate Director for Laboratory Programs/Principal Deputy, NIST
Keynote Talks
Pushing Beyond the Frontiers of Technology
Mike Mayberry, VP and Director of Component Research, Intel
Characterization and Metrology Challenges for Emerging Memory Technology Landscape
Naga Chandrasekaran (VP of Process R&D, Micron) and Shifeng Lu (Micron)
Advanced Metrology for Understanding Charge Transport Phenomena in Charge Trap Flash Memory
Gyeong-Su Park, Samsung Advanced Institute of Technology
General
The Value Add of Metrology for the Semiconductor Industry
Dan Hutcheson, VLSI Research
The 2012 ITRS Metrology Roadmap
Alain Diebold, SUNY Albany
Microscopy
MC Simulations of He, Ne Deposition
David Joy, UT/Knoxville
Focused Helium and Neon Ion Beam Induced Deposition: Examination via a 3D Monte Carlo Simulation
Philip Rack, UT/Knoxville
Limits of Aberration Corrected Electron Microscopy
Ruud Tromp, IBM
Aberration-Corrected Scanning Transmission Electron Microscopy
Ondrej Krivanek, Nion
Three-Dimensional and Spectroscopic Characterization of Devices at the Atomic Scale Using Aberration-Corrected Electron Tomography
Robert Hovden, Cornell University
A Mirror-Corrected Scanning Electron Microscope
Michael Steigerwald, Carl Zeiss
Nanoscale Thermo and Mechanical Characterization
Adhesion and Thermo-Mechanical Reliability in Emerging Thin Film Device and Energy Technologies
Reinhold Dauskardt, Stanford University
Nano-Scale Characterization of ULK and BEoL Structures: Modulus Mapping and Wedge Indentation Adhesion Measurements
Christoph Sander, Fraunhofer
3D
Metrology Requirements for Manufacturing 3D Integrated Circuits
Martin Schrems, AMS
Multi-Scale Resolution 3D X-ray Imaging for 3D IC Process Development and Failure Analysis
Michael Fesser, Xradia
Novel Characterization Methods
Nanoscale Acoustics, Energy Flow, and Imaging Using Tabletop Coherent EUV High Harmonic Light Sources
Margaret M. Murnane, Univ. of Colorado/Boulder
The Uniqueness and Impact of Using Neutrons to Characterize Semiconductor Materials
Greg Downing, NIST Neutron Center
Probing the Underlying Physics of Nanoelectronics with Raman Spectroscopy
Angela Hight Walker, NIST
Nanoscale Electrical Microscopy
Wilfried Vandervorst, IMEC
Next Generation Defect Metrology
Scatterfield Microscopy, Review of Techniques that Push the Fundamental Limits of Optical Defect Metrology
Rick Silver, NIST
Frontiers in Defect Detection
Lothar Pfitzner, Fraunhofer
Mirror Electron Microscopy for High-Speed and Highly Sensitive Defect Inspection
Masaki Hasegawa, Hitachi
Extreme CMOS Manufacturing
Critical Metrology for Advanced CMOS Manufacturing
Zhiyong Ma and Markus Kuhn, Intel
Beyond CMOS Metrology
Metrology for a Post-CMOS World: an Overview
Tom Theis, NRI
X-ray Photo Electron Spectroscopy of Nanomaterials–Graphene and III-V Interfaces
Robert M. Wallace, UT Dallas
Issues with Characterization of Graphene Field Effect Transistors
Eric Vogel, GIT
Overview on the Characterization for RRAM Technologies
Amal Chabli, CEA Leti
Microwave Measurements of Spintronic Devices
Matthew Pufall, NIST
Metrology for Patterning
Overview of Next Generation Lithography - Advanced Patterning, EUV & Self Assembly
Mark Neisser, SEMATECH
Metrology Tools as Basis for Photo Mask Repair and Mask Performance Improvement
Klaus Edinger, Carl Zeiss
Atom Probe Tomography: a Special Frontiers Session
Frontiers of Atom Probe Microscopy
Karen Henry, Intel
Localized Light Absorption by Nanoscale Semiconducting Tips in Laser-Assisted Atom Probe Tomography
Januz Bogdanowicz, IMEC
Spatial Data Reconstruction for Atom Probe Tomography: a Brief Perspective
David Larson, Cameca Instruments, Inc.
Novel Evaporation Control Concepts
Ty Prosa, Cameca Instruments, Inc.
Atom Probe and (S)TEM Analysis of Semiconductor and Oxide Nanostructures
David Diercks and Brian Gorman, Colorado School of Mines
Poster Presentations
TU-01, Real-Time Spectroscopic Ellipsometry in Atomic Layer Deposition Process
Han Wang, Xiaoqiang Jiang, and Brian G. Willis
Department of Chemical, Materials & Biomolecular Engineering, University of Connecticut, Storrs, Connecticut 06269
TU-02, Measure the Electron and Hole Contact Resistance in Gated Kelvin Structure
Hui Yuan1,2, Curt A. Richter2, Hao Zhu1,2, Haitao Li1,2, Oleg Kirillov2, Dimitris Ioannou1, and Qiliang Li1
1Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030
2Semiconductor and Dimensional Metrology Division, NIST, Gaithersburg, MD 20899-8120
TU-03, Transmission Electron Backscatter Diffraction (T-EBSD) for Characterizing Ultrathin Films in the SEM
Katherine P. Rice, Roy H. Geiss, and Robert R. Keller
Applied Chemicals and Materials Division, National Institute of Standards and Technology, Boulder, CO 80305
TU-04, Spatially-Resolved Dopant Characterization with a Scanning Microwave Microscope
T. Mitch Wallis, Atif Imtiaz, Alexandra E. Curtin, Pavel Kabos, Matthew D. Brubaker, Norman A. Sanford, and Kris A. Bertness
National Institute of Standards and Technology (NIST), 325 Broadway, Boulder, Colorado 80305
TU-05, Modeling Scanning Electron Microscope Measurements with Charging
John S. Villarrubia
National Institute of Standards and Technology, Semiconductor and Dimensional Metrology Division, Stop 8212, 100 Bureau Dr., Gaithersburg, MD 20899
TU-06, Automated STEM and TEM Metrology of Advanced Semiconductor Devices
Mark J. Williamson, Michael Strauss, and David Horspool
FEI Company, 5350 NE Dawson Creek Drive, Hillsboro, Oregon, USA
TU-07, Contamination-Free Scanning Electron and Helium Ion Microscopy
K.P. Purushotham, András E. Vladár, and Michael T. Postek
National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899-8212, USA
TU-08, Measurement of Silica Particles by Transmission Electron Microscope
F. Kole, Y. Guan, and P. Konicek
VLSI Standards, Inc., Five Technology Drive, Milpitas, California 95035 USA
TU-09, Applications of Electron Tomography to Advanced CMOS Process Technology
Hugh L. Porter1 and Jeremy D. Russell2
1SEMATECH and GLOBALFOUNDRIES, 257 Fuller Road, Suite 2200, Albany, NY 12203
2GLOBALFOUNDRIES, 400 Stone Break Extension, Malta, NY 12020
TU-10, Quantitative Characterization and Applications of 193 nm Scatterfield Microscope
M. Y. Sohn1,2, B. M. Barnes1, and R. M. Silver1
1National Institute of Standards and Technology (100 Bureau Drive, Gaithersburg, MD)
2Hyperion Biotechnology, Inc. (12002 Warfield, Suite 101, San Antonio, TX)
TU-11, 3-D Optical Metrology of Finite sub-20 nm Dense Arrays using Fourier Domain Normalization
J. Qin, H. Zhou, B. M. Barnes, R. Dixson, and R. M. Silver
Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, 100 Bureau Dr. MS 8212, Gaithersburg, MD USA 20899-8212
TU-12, Multi-Technique Approach for Determination of Crystalline Phase and Electronic Structure of Atomic Layer Deposited Hf1-xZrxO2
Relja Vasic1, Steven Consiglio2, Robert Clark2, Kandabara Tapily2, Manasa Medikonda1, Gangadhara Raja Muthinti1, Eric Bersch3, Gert Leusink2, and Alain Diebold1
1College of Nanoscale Science and Engineering, University at Albany, 257 Fuller Rd., Albany, NY 12203
2TEL Technology Center, America, LLC, 255 Fuller Rd., Albany, NY 12203
3SEMATECH, 257 Fuller Rd., Albany, NY 12203
TU-13, Quantification of Hafnium in Hafnium Oxide Film by Isotope Dilution Neutron Activation Analysis
Toshiko Takatsuka, Kouichi Hirata, Kenji Ito, Naoko Nonose, and Tsutomu Miura
National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
TU-14, Complementary Metrology - A Prerequisite for Reliable and Traceable Characterization of Surfaces and Nanolayers
Andreas Nutsch1,2, Burkhard Beckhoff1, and Jaap Van Den Berg3
1Physikalisch-Technische Bundesanstalt, Abbestr 2-12, 10587, Berlin, Germany
2previously Fraunhofer IISB, Schottkystrasse 10, 91058 Erlangen, Germany
3University of Huddersfield, Huddersfield, HD1 3DH United Kingdom
TU-15, SIMS Correction and Depth Profiling of Ion Implantations Using Grazing Incidence XRF
Philipp Hönicke1, Burkhard Beckhoff1, Yves Kayser2, and Sven Kayser3
1Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin, Germany
2Paul Scherrer Institut, 5232 Villigen PSI, Switzerland
3ION-TOF GmbH, Heisenbergstr. 15, 48149 Münster, German
TU-16, Towards Nanoelectronics Metrology with a Laboratory Set-Up in the Soft X-Ray Range
D. Grötzsch1, B. Kanngiefler1, I. Mantouvalou1, C. Herzog1, K. Witte1, M. Spanier1, J. Lubeck2, P. Hönicke2, and B. Beckhoff2
1Technische Universität Berlin, Institut für Optik und Atomare Physik, Hardenbergstr. 36, 10623 Berlin
2Physikalisch Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin, Germany
TU-17, Local Tunneling Measurements of in-situ Gated Topological Insulators
Jeonghoon Ha1,2,3, Niv Levy1,2, Tong Zhang1,2, Young Kuk3, and Joseph A. Stroscio1
1Center for Nanoscale Science and Technology, NIST, Gaithersburg, MD 20899, USA
2Maryland NanoCenter, University of Maryland, College Park, MD 20742, USA
3Department of Physics and Astronomy, Seoul National University, Seoul, 151-747, Korea
TU-18, Comprehensive Characterization and Understanding of Micro-Porous Low-κ Interconnects Using PALS, EP and XRR
D. Yang1, R.L. Opila1, G. Jiang2, V. Pallem2, D.W. Gidley3, and N. Bhargava4
1Department of Materials Science and Engineering, University of Delaware, Newark, Delaware
2Delaware Research & Technology Center, Air Liquide America, Newark, Delaware
3Department of Physics, University of Michigan, Ann Arbor, Michigan
4Department of Electrical Engineering, University of Delaware, Newark, Delaware
TU-19, Direct Analysis of Undiluted Photoresist with Inline Autodilution Inductively Coupled Plasma Mass Spectrometry
Hyun-Kee Hong1, J. S. Lee2, Austin Schultz2, Paul Field2, and Daniel Wiederin2
1Samsung Electronics Co. Ltd., San #5, Banwol-Dong, Hwasung City, Gyeonggi-Do, Korea 445-701
2Elemental Scientific, 1500 North 24th Street Omaha, NE 68110, USA
TU-20, Extraction of Interfacial Doping Density in Metal/Silicon Contacts
Khaled Ahmed
Intermolecular, Inc., 3011 North First Street, San Jose, California 95134, USA
TU-21, Sub-Surface Metrology Using X-Ray Emitting AFM Probes
Faisal K. Chowdhury, H. Pourzand, and M. Tabib-Azar
Dept. of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, USA, 84112
TU-22, Work Function Characterization Of Si1-xGex Heterostructure Using Kelvin Force Microscopy and Electron Spectroscopy
Sylvain Pouch, Nicolas Chevalier, Denis Mariolle, Eugenie Martinez, Pradeep Kumar, Olivier Renault, Julien Morin, Jean-Michel Hartmann, and Łukasz Borowik
CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 GRENOBLE Cedex 9, France
TU-23, Measurement Uncertainties in MEMS Kinematics by Super-Resolution Fluorescence Microscopy
Craig D. McGray, Samuel M. Stavis, and Jon Geist
National Institute of Standards and Technology, Gaithersburg, MD 20899
TU-24, Sample Alignment of X-Ray Reflectometry Using Thickness and Density From Certified Reference Materials
Donald Windover1, David L Gil1, Yasushi Azuma2, and Toshiyuki Fujimoto2
1National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
2National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8568, Japan
WE-01, A Versatile Variable Field Module for Asylum Cypher Scanning Probe System
Hongxue Liu1, Ryan Comes1, Jiwei Lu1, Stuart Wolf1, Jim Hodgson2, and Maarten Rutgers2
1Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904
2Asylum Research, Santa Barbara, CA 93117
WE-02, Metrology for Organic Monolayers on Cobalt Surfaces
S. Pookpanratana1, L. K. Lydecker1,2, H.- J. Jang1, C. A. Richter1, and C. A. Hacker1
1Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology
2College of Nanoscale Science and Engineering, University at Albany
WE-03, Evaluation of Possible Standards for X-Ray Reflectometry
P. DeHaven1, E. Nolot2, A. Madan1, A. Michallet3, S. Favier3, D. Le Cunff3, and R. Duru3
1IBM Corporation, 2070 Route 1 52, Hopewell Junction, NY USA
2CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France.
3ST Microelectronics - 850, Rue Jean Monnet, 38926 Crolles Cedex, France.
WE-04, Metrology Studies with NEMO, a Multimillion Atom Simulation Tool
G. Klimeck1, J. E. Fonseca1, R. Rahman1, N. Kharche2,3, G. P. Lansbergen4, and S. Rogge5
1Network for Computational Nanotechnology, Purdue University, West Lafayette, IN USA
2Department of Physics, Rensselaer Polytechnic Institute, Troy, NY, USA
3Brookhaven National Laboratory, Upton, NY, USA
4Kavli Institute of Nanoscience, Delft University of Technology, The Netherlands
5Centre for Quantum Computation & Communication Technology, School of Physics, The University of New South Wales Sydney, Australia
WE-05, Impact of X-Ray Synchrotron Studies on Nanoelectronics
Jonathan Lang, David Keavney, Volker Rose, Ross Harder, Yuxin Wang, Jon Tischler, Wenjun Liu, Jin Wang, Tao Sun, Steve Heald, Albert Macrander, Lahsen Assoufid, and Jyotsana Lal
X-Ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne, IL-60439, USA
WE-06, The MEMS 5-in-1 Test Chips (Reference Materials 8096 and 8097)
Janet Cassard1, Jon Geist1, Craig McGray2, Richard A. Allen1, Muhammad Afridi3, Brian Nablo1, Michael Gaitan1, and David G. Seiler1
1Semiconductor and Dimensional Metrology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899-8120
2Modern Microsystems, Inc., 11522 Soward Dr., Silver Spring, MD 20902
3Potomac Networks, 1301 Delaware Avenue SW #N716, Washington DC 20024
WE-07, Contact Resonance AFM on TiN-Low-k Dielectric Films and Patterns
Gheorghe Stan1,2, Lawrence Friedman1, Robert Cook1, Sean King3, Alan Myers4, Marc van Veenhuizen4, and Chris Jezewski4
1Material Measurement Laboratory, NIST, Gaithersburg, MD
2Department of Mechanical Engineering, University of Maryland, College Park, MD
3Logic Technology Development, Intel Corporation, Hillsboro, OR
4Components Research, Intel Coporation, Hillsboro
WE-08, Adhesion Characterization of SiCN/SiO2 in BEOL and Thin Si/Passivation For TSV Integration Using Nanoscratch Technique
Guohua Wei, Sam Ireland, Junting Liu-Norrod, Jaspreet Gandhi, Irina Vasilyeva, Anurag Jindal, Rita Klein, Tom Mendiola, Harold Krasinski, David Fillmore, and Shifeng Lu
Micron Technology, Inc., 8000 S. Federal Way, Boise, ID, USA
WE-09, Analysis of Local Stress Distribution in a Metal Gate MOSFET with a New Raman Simulation Method
Tetsuya Tada1, Vladimir Poborchii1, Hiroshi Arimoto1, Akira Satoh1, Koichi Fukuda1, Kazuhisa Fujita2, and Toshihiko Kanayama1
1National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
2ASTOM R&D, 2-3-13 Minami, Wako-shi, Saitama 351-0104 Japan
WE-10, Automated Strain Measurement Using Nanobeam Diffraction Coupled with Precession
A. Darbal1, R. Narayan1, C. Vartuli2, G. Lian2, S. Nicolopoulos3, and J. K. Weiss1
1AppFive, LLC, 1095 W. Rio Salado Pkwy, Suite 110, Tempe, AZ 85281, USA
2Texas Instruments, 13121 TI Boulevard, Dallas, TX 75243, USA
3NanoMEGAS SPRL, Blvd Edmond Machtens 79, B-1080 Brussels, Belgium
WE-11, Optical Dynamic Picocalorimeter for Fast Thermodynamic Measurements
Brian G. Burke and David A. LaVan
Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, Maryland, USA
WE-12, Accuracy and Resolution of Nanoscale Strain Measurement Techniques
Will Osborn1, Lawrence Freidman1, Mark Vaudin1, Steve Stranick1, Michael Gaither1, Justin M. Gorham1, Victor Vartanian2, and Robert Cook1
1Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, MD
23D enablement Center Metrology, Sematech, Albany, NY
WE-13, Full Wafer Spatially Resolved Adhesion Testing of ULK-Films Without Sample Preparation
Ude D. Hangen, Andy Romano, and David Vodnick
Hysitron, Inc., 9625 West 76th Street, Minneapolis, MN 55344
WE-14, Design of Test Structure for 3D-Stacked Integrated Circuits (3D-SiCs) Metrology
Lin You, Jung-Joon Ahn, and Joseph J. Kopanski
Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
WE-15, A New Prognostic Tool for TSV Reliability Assessment Using RF Signals
Chukwudi Okoro1, Pavel Kabos1, June W. Lau1, Jan Obrzut1, Klaus Hummler2, and Yaw S. Obeng1
1National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899
2SEMATECH, 257 Fuller Road, Albany, NY 12203
WE-16, TSV Reveal Height and Bump Dimension Metrology by the TSOM Method: from Nanometer to Micrometer Scale
Victor Vartanian1, Ravikiran Attota2, Steve Olson3, Robert Edgeworth4, Iqbal Ali1, Craig Huffman1, Pete Moschak3, Harry Lazier3, and Elizabeth Lorenzini3
1SEMATECH, Albany, NY, USA
2Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD, USA
3College of Nanoscale Science and Engineering (CNSE), SUNY Albany, assignee to SEMATECH
4Intel assignee to SEMATECH
WE-17, Defect Metrology of Epitaxial Ge on Patterned Si Wafers Using an Inline HRXRD Tool
M. Wormington1, P.Y. Hung2, M.-H. Wong2, C.T. Schamp3, A. Giladi4, M. Klinov4 , W.-E Wang2, G. Bersuker2, P. D. Kirsch2, and R. Jammy2
1Jordan Valley Semiconductors, Austin, TX 78744, USA
2SEMATECH, Albany, NY 12203, USA
3Novati Technologies, Austin, TX 78741
4Jordan Valley Semiconductors, Migdal HaíEmek 23100, Israel
WE-18, XPS Tool Matching and Optimization for EUV Optics Contamination Studies
Yudhishthir Kandel1, Mihir Upadhyaya1, Gregory Denbeaux1, and Cecilia Montgomery2
1College of Nanoscale Science and Engineering, University at Albany, SUNY, 257 Fuller Rd, Albany, NY 12203
2SEMATECH, 255 Fuller Rd, Albany, NY 12203
WE-19, Cross Spectrum Noise Spectroscopy for Deep Level Trap Detection in Nano-Scale Semiconductor Devices
Deepak Sharma1,2, Sergiy Krylyuk1,3, Abhishek Motayed1,3, Qiliang Li1,2, and Albert V. Davydov1
1National Institute of Standards and Technology, Gaithersburg, MD 20899 USA
2Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030 USA
3IREAP, University of Maryland, College Park, MD 20742 USA
WE-20, Development of High Resolution Topographic Characterization at Die Scale by Interferometry
F. Dettoni1, C. Beitia2, S. Gaillard1, O. Hinsinger1, F. Bertin2, and M. Rivoire1
1STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France
2CEA, Leti, campus MINATEC, 17, rue des Martyrs, 38054 Grenoble Cedex 9, France
WE-21, Development of Three-Dimensional Raman Spectra Analysis System for TCAD Stress Simulation in FinFET Structures
Hiroshi Arimoto1, Akira Satoh1, Vladimir Poborchii1, Tetsuya Tada1, Koichi Fukuda1, Koji Usuda2, Kazuhisa Fujita3, and Toshihiko Kanayama1
1National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki, Japan
2Green Nanoelectronics Center (GNC), AIST West, 16-1 Onogawa, Tsukuba, Ibaraki, Japan
3ASTOM R&D, 2-3-13 Minami, Wako-shi, Saitama, Japan
WE-22, Characterization of SiO2/Si Interface Quality by Photoluminescence
Shiu-Ko Jang Jian1, Chih-Cherng Jeng1, Ting-Chun Wang1, Chih-Mu Huang1, Ying-Lang Wang1, and Woo Sik Yoo2
1Taiwan Semiconductor Manufacturing Company, Ltd., No. 1-1, Nan-Ke Rd., Science-Based Industrial Park, Tainan, 741-44, Taiwan
2WaferMasters, Inc., 254 East Gish Road, San Jose, CA 95112, USA
TH-01, Complementary Methodologies for Thin Film Characterization in One Tool - a Novel Instrumentation for 450 mm Wafers
Ina Holfelder1, Philipp Hönicke1, Andreas Nutsch1,2, and Burkhard Beckhoff1
1Physikalisch-Technische Bundesanstalt, Abbestr 2-12, 10587, Berlin, Germany
2previously Fraunhofer IISB, Schottkystrasse 10, 91058 Erlangen, Germany
TH-02, Soft X-Ray Characterization of DSA Block Copolymers
Daniel Sunday, Wen-Li Wu, and R. Joseph Kline
National Institute of Standards and Technology (NIST), Gaithersburg MD
TH-03, HAXPES for Non-Destructive Analysis of Chemistry at Buried Interfaces in Advanced Gate Stacks
Paul Risterucci1, Eugénie Martinez1, Rachid Boujamaa2, Jörg Zegenhagen3, Blanka Detlefs3, Mickael Gros-Jean2, Catherine Dubourdieu4, and Olivier Renault1
1CEA, LETI, MINATEC Campus, GRENOBLE Cedex 9, France
2STMicroelectronics, 850 rue Jean Monnet, Crolles, France
3European Synchrotron Radiation Facility, Grenoble, France
4LMGP, CNRS, Grenoble INP, Grenoble, France
TH-04, WITHDRAWN
TH-05, Charge-Based Capacitance Measurements Circuits for Interface with Atomic Force Microscope Probes
Joseph Kopanski, M. Yaqub Afridi, Chung Jeong, Michael Lorek, Timothy Kohler, and Curt. A. Richter
Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
TH-06, Vibrating Sample Magnetometry Study of High-Permeability Dielectrics on Nanomagnets
Peng Li1, Gyorgy Csaba1, Michael Niemier2, X. Sharon Hu2, Joseph J. Nahas2, Wolfgang Porod1, and Gary H. Bernstein1
1Center for Nano Science and Technology, Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA
2Department of Computer Science and Engineering, University of Notre Dame, Notre Dame, IN 46556, USA
TH-07, Pore Size Evaluation of Low-κ Thin Films by Using X-Ray Porosimetry
Yong-Qing Chang, Bo-Ching He,Hsin-Chia Ho, and Wei-En Fu
Center for Measurement Standards, Industrial Technology Research Institute 321, Sec.2, Kuangfu Rd., Hsinchu, 30011, Taiwan
TH-08, New Experiments and Applications Made Possible by a Low Temperature 4-Tip STM with UHV-SEM Navigation
Andreas Bettac, Berndt Guenther, Juergen Koeble, Fred Henn, and Albrecht Feltz
Omicron NanoTechnology GmbH, Limburger Str. 75, D-65232 Taunusstein, Germany
TH-09, Local Measurements of Graphene Electronics Using Gate Mapping Tunneling Spectroscopy
Jungseok Chae1,2, Yue Zhao1,2, Suyong Jung1,2,3, Andrea F. Young4, Cory R. Dean5,6, Lei Wang6, Yuanda Gao6, Kenji Watanabe7, Takashi Taniguchi7, James Hone6, Kenneth L. Shepard5, Phillip Kim4, Nikolai B. Zhitenev1, and Joseph A. Stroscio1
1Center for Nanoscale Science and Technology, National Institute of Standard and Technology
2Maryland NanoCenter, University of Maryland
3Korea Research Institute of Standards and Science
4Department of Physics, Columbia University
5Department of Electrical Engineering, Columbia University
6Department of Mechanical Engineering, Columbia University
7Advanced Materials Laboratory, National Institute for Materials Science
TH-10, Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide
Rusen Yan1,2, Qin Zhang1,2, Oleg A. Kirillov1, Wei Li1,3, James Basham1, Alex Boosalis1,4, Xuelei Liang3, Debdeep Jena2, Curt A. Richter1, Alan Seabaugh2, David J. Gundlach1, Huili G. Xing2, and N. V. Nguyen1
1Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
2Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA
3Key Laboratory for the Physics and Chemistry of Nano Devices, Peking University, Beijing, China
4Department of Electrical Engineering and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
TH-11, Direct Measurement of the Intrinsic Dirac Point of Graphene
Kun Xu1,2, Caifu Zeng3, Qin Zhang1,4, Rusen Yan1,4, Peide Ye2, Kang Wang3, Alan C. Seabaugh4, Huili Grace Xing4, John S. Suehle1, Curt A. Richter1, David J. Gundlach1, and N. V. Nguyen1
1National Institute of Standards and Technology, Gaithersburg, Maryland
2Purdue University, West Lafayette, IN
3University of California, Los Angeles, Los Angeles, CA
4University of Notre Dame, Notre Dame, IN
TH-12, Revelation of Pattern Formation in Single Ferromagnetic CoFeB Film by Using the Giant Spin Hall Spin Torque
Wanjun Jiang, Pramey Upadhyaya, Li-Te Chang, Kin L. Wong, Jing Zhao, Tianxiao Nie, Murong Lang, Robert N. Schwartz, and Kang L. Wang
Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, California, USA, 90095
TH-13, Measure the Charge Storage Speed and Endurance of Redox-Active Molecules
Hao Zhu1,2, Christina A. Hacker2, Curt A. Richter2, Hui Yuan1,2, Haitao Li1,2, Oleg Kirillov2, Dimitris Ioannou1, and Qiliang Li1,2
1Dept. of Electrical and Computer Engineering, George Mason University, Fairfax, VA
2Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD
TH-14, The Statistic Characteristics of Switching Parameters for Ta2O5-X Based RRAM
Haitao Li1,2, Curt A. Richter2, Oleg Kirillov2, Hao Zhu1,2, Hui Yuan1,2, Qiliang Li1,2
1Dept. of Electrical and Computer Engineering, George Mason University, Fairfax, VA
2Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD
TH-15, Interactions Between Two Independently Contacted and Rotationally Aligned Graphene Layers
Christopher Corbet, Kayoung Lee, Babak Fallahazad, Emanuel Tutuc, and Sanjay Banerjee
The Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Road, Building 160, Austin Texas, 78758
TH-16, FinFET Sidewall Roughness Measurement and Correlation to Device Performance
A. F. Bello1, Aaron Cordes2, Abhijeet Paul1, Shogo Mochizuki3, Chun-Chen Yeh4, and Huiming Bu4
1Technology Research Group, GLOBALFOUNDRIES, 257 Fuller Rd., Suite 3100, Albany, NY
2Sematech, 257 Fuller Rd., Suite 2100, Albany, NY
3Renesas, 257 Fuller Rd., Suite 3100, Albany, NY
4IBM Microelectronics, 257 Fuller Rd., Suite 3100, Albany, NY
TH-17, Optical Scatterometry for In-Die Sub-Nanometer Overlay Metrology
Henk-Jan H. Smilde1, Martin Jak1, Arie den Boef1, Mark van Schijndel1, Murat Bozkurt1, Andreas Fuchs1, Maurits van der Schaar1, Steffen Meyer1, Stephen Morgan1, Jon Wu1, Vincent Tsai1, Frida Liang1, Cathy Wang1, Kaustuve Bhattacharyya1, Guo-Tsai Huang2, Chih-Ming Ke2, and Kai-Hsiung Chen2
1ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands
2TSMC Ltd, 8, Li-Hsin Rd. 6. Hsinchu Science Park, Hsinchu, Taiwan 300-77, R.O.C.
TH-18, CD-SAXS for 3D Dimensional Metrology on 32 nm Pitch Line Patterns
Daniel F. Sunday1, Wen-li Wu1, Scott List2, and R. Joseph Kline1
1Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD 20899
2Intel Corporation, Hillsboro, OR 97124
TH-19, On Sub-10 nm 3D CD-SEM Metrology
András E. Vladár, John S. Villarrubia, Bin Ming, and Michael T. Postek
National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899-8212, USA
TH-20, CD Metrology Gaps Analysis from the 22 nm Node Onwards
Benjamin Bunday
SEMATECH, 257 Fuller Rd, Albany NY, 12203 USA
TH-21, Fabrication and Characterization of Standards for Atomic Force Microscope Tip Width Calibration
Ronald Dixson1, Craig McGray1, Boon Ping Ng2, Ndubuisi G. Orji1, and Jon Geist1
1NIST Semiconductor and Dimensional Metrology Division, 100 Bureau Drive, Gaithersburg, MD 20899
2Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075
TH-22, Shallow Probe: Non-Destructive Compositional Metrology for Films and Structures
Mona P. Moret, Anna Meura, Anne-Sophie Robbes, and Michel Schuhmacher
CAMECA, 29 quai des Grésillons, 92 622 Gennevilliers, France
TH-23, Device-Level Electrical Characterization Using Ferromagnetic Resonance of Magnetic Multilayers
Eric R. Evarts, Matthew R. Pufall, and William H. Rippard
Magnetics Group, Electromagnetics Division, NIST, 325 Broadway, Boulder, CO 80305
