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Dr. David J. Gundlach

Dr. Gundlach is an electrical engineer and the leader of the Thin Film Electronics Project in the Nanoelectronics Group of the Physical Measurement Laboratory at the National Institute of Standards and Technology. His research interests include: active thin film electronic devices, organic electronic and optoelectronic devices, photovoltaic materials and devices, thermal electric materials and devices, 2D-layered electronic materials and devices, novel device/system integration, and display technology.

Dr. Gundlach conducts and supervises basic research to develop and advance novel measurements that combine and correlate optical and electrical methods such as internal photoemission, spectroscopic ellipsometry, temperature dependent current-voltage spectroscopy, impedance spectroscopy, and transient photo-current/voltage spectroscopy. Particular emphasis is placed on direct, non-destructive optical-electrical and electrical measurement methods to quantify band structure, charge transport, and density of in-gap electrically active traps for the rational design and advanced manufacturing of emerging and future semiconductor electronics devices. Current research focuses on flexible/printed electronics, replacements to scaled Si logic and memory, 2D-layered semiconductor materials and devices, and Gen II and III solar cells by tailoring existing measurements, establishing new measurements, and designing and building device analogous high quality test structures to provide the measurement science infrastructure necessary for underpinning innovation in industry, academia, and government laboratories.

Dr. Gundlach has authored more than 60 peer reviewed journal articles; accumulating 6000+ citations in total. He has authored more than 180 conference and workshop publications, holds 4 patents, and gives invited seminars throughout the world. Dr. Gundlach has co-chaired conference symposium for SPIE, ECS, and MRS, organized several workshops, and organized symposium at the EMC, ISDRS, and IRPS. Most recently, he was the 2009 Technical Program Chair for the Device Research Conference, and the General Conference Chair in 2010. Also in 2010, Dr. Gundlach was co-recipient of the 2010 William P. Slichter Award for strong collaborative interactions with industry to develop the measurements needed to accelerate the commercialization of organic electronics. In 2011, he was the Technical Program Co-Chair for the MRS/APS/IEEE Sponsored Organic Microelectronics and Optoelectronics Workshop. This year Dr. Gundlach is a Technical Program Vice-Co-Chair for the International Semiconductor Device Researcher Conference, and a Committee Member for the International Electron Device Meeting (IEDM): Displays, Sensors, and MEMs.  Dr. Gundlach is a member of the IEEE, ECS, and MRS, and serves on the editorial board of IEEE Transactions on Electron Devices.

Dr. David Gundlach

Position:

Electrical Engineer
Semiconductor & Dimensional Metrology Division
Nanoelectronics Group

Employment History:

Since 2005, Project Leader at NIST.

2003-2005, research staff member at the Laboratory for Solid State Physics, Eidgenössische Technische Hochschule (ETH) Zürich, Switzerland.

2001-2003, post-doctoral researcher at the IBM Zurich Research Laboratory, conducting research on organic semiconductor-based electroluminescent devices.

Education:

B.S. in Physics (1992), and M.S. and Ph.D. in Electrical Engineering (1997 and 2001, respectively) from The Pennsylvania State University. 

Contact

Phone: 301-975-2048
Email: david.gundlach@nist.gov