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Dr. Ryan is an electrical engineer in the CMOS and Novel Devices Group in the Engineering Physics Division of the Physical Measurement Laboratory (PML) at the National Institute of Standards and Technology (NIST). He received the B.S. degree in Physics from Millersville University, Millersville, PA in 2004. He received the M.S. degree in Engineering Science and the Ph.D. in Materials Science and Engineering from The Pennsylvania State University, University Park, PA in 2006 and 2010, respectively. In 2010, he was awarded a National Research Council (NRC) post-doctoral fellowship which he spent in the Semiconductor & Dimensional Metrology Division at NIST where he is currently employed as a staff member. He has contributed to more than 35 technical publications and 55 presentations at national and international conferences. He has been involved in the technical and managerial committees of both the IEEE IRPS and IEEE IIRW conferences. His research interests involve the fundamentals of the atomic scale defects responsible for critical failure and drift mechanisms in advanced microelectronic devices.
Engineering Physics Division
CMOS and Novel Devices