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Dr. Kin (Charles) P. Cheung

Dr. Cheung is a physical scientist in the CMOS Reliability and Advanced Devices Group (683.06) in the Semiconductor & Dimensional Metrology Division (683) of the Physical Measurement Laboratory (PML) at the National Institute of Standards and Technology (NIST). Prior to joining NIST in 2007, Dr. Cheung was an associate professor in Rutgers University. Prior to Rutgers University, Dr. Cheung spent 18 Years as a member of technical staff in Bell Laboratories at Murray Hill, NJ. Dr. Cheung published over 140 refereed journal and conference papers. He has written a monograph entitled "Plasma Charging Damage" which published in 2000. He holds 6 patents. Dr. Cheung taught tutorial in many international conferences. He also served in the committees of many of these conferences. Dr. Cheung received the Bell Lab President's Gold Award in 1997, and the Outstanding Achievement Award from the International Symposium on Plsam Process-Induced Damage.

Dr. Kin (Charles) P. Cheung

Position:

Physical Scientist
Semiconductor & Dimensional Metrology Division
CMOS Reliability and Advanced Devices Group
Contact

Phone: 301-975-3093
Email: charles.cheung@nist.gov