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Dr. Herbert S. Bennett

International Standards

  • Dr. Bennett was elected as a voting member-at-large on the Board of Governors (BoG) for the Institute of Electrical and Electronics Engineers Standards Association (IEEE-SA), 2012 to 2013. The IEEE-SA BoG oversees and directs the IEEE-SA by establishing policy, providing financial oversight, and conducting standards-related activities within IEEE technological fields. He serves on the IEEE-SA BoG's Standards Education Committee and its Global Coordinating Committee, as well as the IEEE Publications Services and Products Board (PSPB).
  • Dr. Bennett was sole U.S. representative to the International Electrotechnical Commission (IEC) Advisory Board on Nanotechnologies (ABN20) from 2003-2005. The five members of the ABN20 recommended to the IEC that it establish a new IEC Technical Committee TC 113 on nano-electrotechnologies (IEC TC 113). He currently is one of 5 members of the IEC TC 113 Chairman's Advisory Group (CAG).
  • As the IEC TC 113 CAG's Survey Project Leader, he led in 2008 the NIST-Energetics-IEC TC 113 Nano-Electrotechnologies International Survey to establish priorities for standards development and measurements for electrical and electronic products and systems. Over 460 international nanotechnology experts participated in the survey. This survey identified those nanotechnology areas for which standards are needed now to accelerate innovation and commercialization of emerging technologies. He presented the results from this survey with the IEEE Electron Devices Society (EDS), IEEE Nanotechnology Council's Standards Committee and its Nanoelectronics Standards Roadmap (NESR) initiative.
  • He was a member of the Institute of Electrical and Electronic Engineers (IEEE) Standards Association (IEEE - SA) Committee 1650 on Carbon Nanotubes that wrote the IEEE Standard 1650 entitled "IEEE Standard Test Methods for Measurement of Electrical Properties of Carbon Nanotubes," IEEE STD 1650 – 2005. The IEEE Nanotechnology Council sponsored IEEE STD 1650.
  • In 2006, he established the Technical Advisory Group (TAG) to the IEC TC 113 for the American National Standards Institute's U.S. National Committee (USNC) and served as its Technical Advisor until 2008. Since 2008, he has been a member of the USNC TAG to IEC TC 113 on nano-electrotechnologies.
  • He co-led in 2007-2008 the efforts for IEEE, Semiconductor Equipment and Materials International (SEMI), and Asian Nano Forum (ANF) to have Category D-Liaisons with the IEC TC 113 Working Groups.
  • He has been since 2007 a member of the American National Standards Institute (ANSI) accredited U.S. TAG to the International Standards Organization (ISO) TC 229 on nanotechnologies.
  • As Chief of the Solid-State Materials Section at NIST (formerly the National Bureau of Standards), he led in the mid-1970s the research and production of standard reference materials (SRMs) and data (SRDs) for Raman spectroscopy, electron paramagnetic resonance, and magnetic moment measurements. He established the needs and priorities for these SRMs and SRDs by analyzing the results from three international surveys of experts in these respective fields.

Standards enable innovative products and new markets. - Patrick Gallagher, NIST Director, November 2009.

International Technology Roadmapping

Dr. Bennett has served on and continues to serve on industrial and government advisory boards and committees. He has contributed to industrial consensus-based planning in computer-assisted design, device and process modeling, wireless technologies, and more-than-Moore applications of electronics.

He contributed to Chapters on RF Components and Systems for the International Electronics Manufacturing Initiative, Inc. (iNEMI) roadmaps and contributed to and edited Chapters on RF and Analog/Mixed-Signal (RF and AMS) Technologies for the International Technology Roadmap for Semiconductors (ITRS. He co-founded the ITRS Working Group on RF and AMS Technologies for Wireless Communications in 2001 as the way to include compound semiconductors in the ITRS. He currently is chairman is the chairman of the RF and AMS Working Group. He also served as a member of the U. S. Government's Interagency High-End Computing Revitalization Task Force, 2003-2005.

He is currently promoting improved standards and measurements for more than Moore applications of nanoelectronics and for quantitative medical imaging modalities such as those used in telemedicine applications and those used to assess bone health.   

Management and Research

Dr. Bennett is a NIST Fellow and Executive Advisor at the National Institute of Standards and Technology (NIST), formerly the National Bureau of Standards (NBS), Gaithersburg, MD. He has over 35 years experience in international standards and measurements for figures of merit (FoMs) of electronic, magnetic, and optical devices and materials. He served in the U.S. Navy from 1958 to 1960. He was a Research Associate with the Atomic Energy Research Establishment (England) during 1964-1965 and with the University of Illinois, Department of Physics and Materials Research Laboratory during 1965-1966. He has held management and research positions at NBS/NIST and management positions at the Department of Commerce and the National Science Foundation. He was appointed a Department of Commerce Science and Technology Fellow for 1971 and 1972. He was the Director of the Division of Materials Research at the National Science Foundation from 1978 to 1980. At the request of Congressional Committees, he has appeared before them to provide testimonies on materials research.

He received Maryland's Outstanding Young Scientist Award for 1970 from the Maryland Academy of Sciences for his extensive theoretical work on ferromagnetic materials near their Curie temperatures, on analyses of temperatures and stresses induced in laser glasses, and on original calculations of electronic states and lattice vibrations in the vicinity of defects in ionic crystals. In 1997, he was elected a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) for his pioneering work on applying solid-state theories and quantum mechanics to model the effects of high concentrations of carriers and dopants in advanced semiconductor devices. He has been an IEEE Distinguished Lecturer since 2002. In 2004, he was elected a Fellow of the American Physical Society for his insights into advanced solid-state materials and the development of unique physical models that led to improved performance of electronic, magnetic, and optical materials and that suggested new design strategies for devices based on such materials. In 2007, he received the Department of Commerce Bronze Medal Award for superior federal service based on his contributions to the first-ever quantitative assessment of the U.S. Measurement System's ability to sustain innovation at a world-leading pace. In 2012, he was elected a Fellow of the Materials Research Society for his seminal contributions to computational materials science, theory of materials, and international standards.

He was the Chairman of the 1994 NUPAD (International Conference on Numerical Modeling of Processes and Devices) and helped unify three international conferences called NUPAD, VPAD (VLSI Process and Device Modeling), and SISDEP (Simulation of Semiconductor Devices and Processes) into one international meeting called SISPAD (Simulation of Semiconductor Processes and Devices). He served as an elected member of the IEEE Electron Devices Society (EDS) Administrative Committee (AdCom) from 1995 to 2000. He established the EDS AdCom Compound Semiconductor Devices and Circuits Technical Committee and served as its Chairman from 1977 to 2004. He currently serves on the IEEE Fellow, EDS Awards, EDS Publications, EDS Optoelectronic Devices Technical, and EDS Technology for Computer Assisted Design Committees. He has served as guest editor for the special issue on compound semiconductors of the IEEE Transactions on Semiconductor Manufacturing in 2003; the special issue on technology for computer assisted design of the IEEE Transactions on Electron Devices in 2007, and the special issue on simulation and characterization of nanoscale-CMOS variability of the IEEE Transactions on Electron Devices in 2010.

He serves on the Strategic Advisory Board for the Wireless Integrated Microsensing and Systems Research Center (WIMS2) at the University of Michigan. The mission of WIMS2 is to advance the design, fabrication, and breadth of the applications for sensor-driven microsensors and systems through research, education, and interactions with industry. These technologies include: micro and nanoscale fabrication, micromachined RF filters and resonators, packaging, power harvesting, low-power circuitry, and wireless interfaces with applications in biomedical devices, chemical and environmental sensors, and infrastructure monitoring.

Dr. Bennett has written over 190 archival technical publications on such topics as magnetic phase transitions in semiconductors and insulators, the Faraday effect, color centers in ionic crystals, and damage mechanisms in laser materials. His more recent research interests and publications include topics on semiconductor device physics, optoelectronics, video technologies, quantitative medical imaging, and nanoscale contacts and interconnects.

Employment History

  • National Institute of Standards and Technology, Gaithersburg, MD,  

    Physical Measurement Laboratory, Semiconductor Electronics Division, NIST Fellow and Executive Advisor, 1998 to present  

    Electronics and Electrical Engineering Laboratory (EEEL), Semiconductor Electronics Division, Senior Research Scientist, 1983-1998; Group Leader for Device Modeling, 1987-1990; and Acting Group Leader for Materials Technology, 1987-1988  

    Advanced Technology Program, Member of Evaluation Board for FY98-02, FY96-01, FY95-04, FY91-01, and FY90-01 Solicitations 

    Advanced Technology Program, Chairman of the Technical Review Panel for FY94-01 Solicitation
  • National Bureau of Standards (NBS), Center for Electronics and Electrical Engineering, Semiconductor Devices and Circuits Division, Senior Scientist and Group Leader for Device Modeling, Gaithersburg, MD, 1980-1983
  • National Science Foundation (NSF), Washington, D.C., Director of the Materials Research Division, 1978-1980
  • National Bureau of Standards (NBS), Institute for Materials Research (IMR), Inorganic Materials Division (IMD), Chief of the Solid State – Optical, Magnetic, and Electronics - Materials Section, Gaithersburg, MD, 1972-1978
  • Department of Commerce, Washington, D.C, Special Assistant to the Assistant Secretary for Science and Technology, 1971-1972  
  • National Bureau of Standards (NBS), Institute for Materials Research (IMR), Inorganic Materials Division (IMD), Gaithersburg, MD, Physicist, 1966-1971
  • University of Illinois, Physics Department, Postdoctoral Research Associate, Champaign Urbana, IL, 1965-1966
  • Atomic Energy Research Establishment, Postdoctoral Research Associate, Harwell, England, 1964-1965
  • MIT National Magnet Laboratory, Cambridge, MA, Summer Research Staff Member, 1962-1963
  • MIT Lincoln Laboratory, Lexington, MA, Summer Research Staff Member, 1960-1961
  • U. S. Navy, Washington, D.C., LTJG, 1958-1960

Honors

  • Fellow of the Materials Research Society, 2012.
  • Department of Commerce Bronze Medal Award for superior contributions to the first-ever quantitative assessment of the U.S. Measurement System, 2007.
  • Life Fellow of the Institute of Electrical and Electronics Engineers, 2005.
  • Fellow of the American Physical Society, 2004.
  • Fellow of Institute of Electrical and Electronics Engineers, 1997.
  • Elected Voting Member-at-Large of the Institute of Electricaland Electronics Engineers Electron Devices SocietyAdministrative Committee, 1995 - 2000.
  • Chapter Member of the Senior Executive Service of the United States of America, 1979
  • Department of Commerce Science and Technology Fellow, 1971-72
  • Maryland's Outstanding Young Scientist of 1970, awarded by Maryland Academy of Sciences, November 1970
  • NBS, May 1970, Outstanding Sustained Superior Performance
  • Resident Graduate Fellowship at Harvard, 1960-64
  • Undergraduate Scholarship at Harvard, 1954-58

Education

  • Ph.D.with high honors in Physics, Harvard University, Cambridge, MA, 1964
  • M.S. in Physics and Mathematics, University of Maryland, College Park, MD, 1960
  • A.B., magna cum laude, in Physics, Harvard College, Cambridge, MA, 1958
Dr. Herbert S. Bennett

Position:

NIST Fellow and Executive Advisor
Semiconductor & Dimensional Metrology Division
Division Office
Contact

Phone: 301-975-2079
Email: herbert.bennett@nist.gov