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Topic Area: Advanced Materials

Displaying records 1 to 10 of 33 records.
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1. Physics-based Electro-thermal Saber Model and Parameter Extraction for High-Voltage SiC Buffer IGBTs
Topic: Advanced Materials
Published: 9/15/2014
Authors: Tam Hoang Duong, Allen R Hefner Jr, Jose Miguel Ortiz, Sei-Hyung Ryu , Edward VanBrunt, Lin Cheng, Scott Allen, John W. Palmour
Abstract: The purpose of this paper is to present a physics-based electro-thermal Saber model and parameter extraction sequence for high-voltage SiC buffer layer n-channel insulated gate bipolar transistors (IGBTs). This model was developed by modifying and ex ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=916319

2. Designing High-Performance PbS and PbSe Nanocrystal Electronic Devices through Stepwise, Post-Synthesis, Colloidal Atomic Layer Deposition
Topic: Advanced Materials
Published: 2/6/2014
Authors: Soong Ju Oh, Nathaniel E. Berry, Hi-Hyuk Choi, E. Ashley Gaulding, Hangfei Lin, Taejong Paik, Benjamin T. Diroll, Shinichiro Muramoto, Murray B. Christopher, Cherie R. Kagan
Abstract: We report a facile, solution based, post synthetic colloidal atomic layer deposition (PS-cALD) process to engineer the surface stoichiometry and therefore electronic properties of lead chalcogenide nanocrystal (NC) thin films. Using the stepwise and ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915267

3. Tunable electrical conductivity in metal-organic framework thin film devices
Topic: Advanced Materials
Published: 1/3/2014
Authors: Albert A. Talin, Andrea Centrone, Alexandra C. Ford, Michael E Foster, Vitalie Stavila, Paul M Haney, Robert Adam Kinney, Veronika A Szalai, Farid El Gabaly, Heayoung Yoon, Francois Leonard, Mark Allendorf
Abstract: We report a strategy for realizing tunable electrical conductivity in MOFs in which the nanopores are infiltrated with redox-active, conjugated guest molecules. This approach is demonstrated using thin-film devices of the MOF Cu3(BTC)2 (also known as ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913452

4. Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide
Topic: Advanced Materials
Published: 3/27/2013
Authors: Rusen Yan, Qin Q. Zhang, Oleg A Kirillov, Wei Li, James Ian Basham, Alexander George Boosalis, Xuelei X. Liang, Debdeep Jena, Curt A Richter, Alan C. Seabaugh, David J Gundlach, Huili G. Xing, Nhan V Nguyen
Abstract: The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912851

5. Measurement of orbital asymmetry and strain in Co^d90^Fe^d10^/Ni multilayers and alloys: Origins of perpendicular anisotropy
Topic: Advanced Materials
Published: 2/13/2013
Authors: Justin M Shaw, Hans T. Nembach, Thomas J Silva
Abstract: We use broadband ferromagnetic resonance spectroscopy and x-ray diffraction to investigate the fundamental origin of perpendicular anisotropy in Co^d90^Fe^d10^/Ni multilayers. By careful evaluation of the spectroscopic {I}g{/I}-factor, we determine ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913103

6. Giant piezoelectricity in PMN-PT thin films: Beyond PZT
Topic: Advanced Materials
Published: 11/1/2012
Authors: S. H. Baek, M. S. Rzchowski, Vladimir A Aksyuk
Abstract: Micro-electromechanical systems (MEMS) incorporating piezoelectric layers provide active transduction between electrical and mechanical energy, which enables highly sensitive sensors and low-voltage driven actuators surpassing the passive operation o ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912113

7. Electro-Thermal Simulation and Design of a 60 A, 4.5 kV Half-Bridge Si IGBT/SiC JBS Hybrid Power Module
Topic: Advanced Materials
Published: 9/15/2012
Authors: Tam Hoang Duong, Allen R Hefner Jr, Karl Hobart
Abstract: This paper presents the results from a parametric simulation study that was conducted to optimize the design of a high-current 4.5 kV half-bridge Si-IGBT/SiC-JBS hybrid module for medium voltage hard-switched power conversion as well as to compare th ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=911712

8. Fluid interactions with metafilm/metasurfaces for tuning, sensing, and microwave assisted chemical processes
Topic: Advanced Materials
Published: 5/25/2011
Authors: Joshua A Gordon, Christopher L Holloway, James C Booth, James R. Baker-Jarvis, David R Novotny, Sung Kim, Yu Y. Wang
Abstract: In this paper we demonstrate tunability of a metafilm, which is the two-dimensional equivalent of a metamaterial, also referred to as a metasurface, by changing the permittivity in a micro-fluidic channel that interacts with the metafilm. Numerical s ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907703

9. Investigation of SiO2/HfO2 stacks for flash memory applications
Topic: Advanced Materials
Published: 4/28/2011
Authors: Nhan V Nguyen, Bashwar Chakrabarti
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=908443

10. Flip Chip Lamination to electrically contact organic single crystals on flexible substrates
Topic: Advanced Materials
Published: 4/20/2011
Authors: Oana Jurchescu, Brad Conrad, Christina Ann Hacker, David J Gundlach, Curt A Richter
Abstract: The fabrication of top metal contacts for organic electronics represents a challenge and has important consequences for electrical properties of such systems. We report a low cost and non-destructive printing process, Flip Chip Lamination (FCL), to f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=907524



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