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Topic Area: Microelectronics

Displaying records 1 to 10 of 39 records.
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1. Non-destructive Measurement of the Residual Stresses in Copper Through-Silicon Vias using Synchrotron Based Micro-beam X-ray Diffraction
Topic: Microelectronics
Published: 7/1/2014
Authors: Chukwudi Azubuike Okoro, Lyle E Levine, Yaw S Obeng, Klaus Hummler, Ruqing Xu
Abstract: In this study, we report a new method for achieving depth resolved determination of the full stress tensor in buried Cu through-silicon vias (TSVs), using synchrotron based X-ray micro-diffraction technique. Two adjacent Cu TSVs were analyzed; on ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915348

2. Microwave-Based Metrology Platform Development: Application of Broad-Band RF Metrology to Integrated Circuit Reliability Analyses
Topic: Microelectronics
Published: 5/12/2014
Authors: Lin You, Chukwudi Azubuike Okoro, Jungjoon Ahn, Joseph J Kopanski, Yaw S Obeng
Abstract: In this paper we describe the development of a suite of techniques, based on the application of high frequency electromagnetic waves, to probe material and structural changes in integrated circuits under various external perturbations. We discuss how ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915367

3. Metrology Needs for TSV Fabrication
Topic: Microelectronics
Published: 3/4/2014
Authors: Victor Vartanian, Richard A Allen, Larry Smith, Klaus Hummler, Steve Olson, Brian Sapp
Abstract: This paper focuses on the metrology needs and challenges of through silicon via (TSV) fabrication, consisting of TSV etch, liner, barrier, and seed (L/B/S) depositions, copper plating, and copper CMP. These TSVs, with typical dimensions within a f ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914497

4. Detection of 3D Interconnect Bonding Voids by IR Microscopy
Topic: Microelectronics
Published: 2/20/2014
Authors: Jonny H?glund, Zoltan Kiss, Gyorgy Nadudvari , Zsolt Kovacs, Szabolcs Velkei, Moore Chris, Victor Vartanian, Richard A Allen
Abstract: There are a number of factors driving 3D integration including reduced power consumption, RC delay, and form factor as well as increased bandwidth. However, before these advantages can be realized, various technical and cost hurdles must be overcom ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914474

5. A Detailed Failure Analysis Examination of the Effect of Thermal Cycling on Cu TSV Reliability
Topic: Microelectronics
Published: 1/1/2014
Authors: Chukwudi Azubuike Okoro, June Waiyin Lau, Yaw S Obeng, Klaus Hummler
Abstract: In this work, a detailed failure analysis of the physical root cause for the increase in electrical resistance and radio-frequency (RF) transmission coefficient of through-silicon via (TSV) daisy chain was investigated. Six different failure modes we ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=913115

6. Back-End-of-Line Test Structure Design and Simulation for Subsurface Metrology with Scanning Probe Microscopy
Topic: Microelectronics
Published: 12/13/2013
Authors: Lin You, Emily Hitz, Jungjoon Ahn, Yaw S Obeng, Joseph J Kopanski
Abstract: As demands in the semiconductor industry call for further miniaturization and performance enhancement of electronic systems, the traditional planar (2D) electronic interconnection and packaging technologies show their difficulties in meeting the ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=915013

7. Dielectrophoretic Trapping of P19 Cells on Indium Tin Oxide based Microelectrode Arrays
Topic: Microelectronics
Published: 11/8/2013
Authors: Aveek Gangopadhyay, Saugandhika Minnikanti, Darwin R Reyes-Hernandez, Mulpuri V. Rao, Nathalia Peixoto
Abstract: A microfabricated device comprised of a microelectrode array (MEA) and a microfluidic channel is presented here for the purpose of trapping cells using positive dielectrophoresis (DEP). Transparent indium tin oxide (ITO) electrodes are patterned in a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=914569

8. Analysis of Implanted Silicon Dopant Profiles
Topic: Microelectronics
Published: 9/1/2013
Authors: B. P. Geiser, Eric B Steel, Karen T Henry, D. Olson, T.J. Prosa
Abstract: Atom probe tomography implant dose measurements are reported for National Institute of Standards and Technology Standard Reference Material 2134 (As implant). Efforts were taken to manufacture specimens with limited variation in size and shape to mi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912365

9. The Impact of Characteristic Impedance on Waveform Calibrations
Topic: Microelectronics
Published: 6/7/2013
Authors: Dylan F Williams, Jeffrey A Jargon, Paul D Hale
Abstract: We examine the impact of the characteristic impedance on mismatch corrections for temporal waveform calibrations based on high-speed electro-optic sampling measurements. We show that failing to measure and account for the characteristic impedance of ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912864

10. Accelerated Stress Test Assessment of Through-Silicon Vias Using RF Signals
Topic: Microelectronics
Published: 6/1/2013
Authors: Chukwudi Azubuike Okoro, Pavel Kabos, Jan Obrzut, Klaus Hummler, Yaw S Obeng
Abstract: In this work, radio frequency (RF) signal is demonstrated as an effective metrology tool for the assessment of the effect of thermal cycling on the reliability of through-silicon via (TSV) stacked dies. It was found that RF signal integrity of TSV da ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=912850



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