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Topic Area: Nanotechnology

Displaying records 311 to 320 of 388 records.
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311. Isotopic Ratio Measurements by Time-of-Flight Secondary Ion Mass Spectrometry
Topic: Nanotechnology
Published: 7/1/2001
Authors: Albert J. Fahey, S R. Messenger
Abstract: Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) is often considered synonymous with SIMS in the static limit where the ion fluence on the sample surface is so low that damage is negligible. For this same reason its use in measuring isotopi ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831143

312. Simultaneous Multianalyte Detection with a Nanometer-Scale Pore
Topic: Nanotechnology
Published: 5/15/2001
Authors: John J Kasianowicz, S. E. Henrickson, H H. Weetall, B Robertson
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=903581

313. Radioactive Particle Analysis by Digital Autoradiography
Topic: Nanotechnology
Published: 5/1/2001
Authors: Cynthia J Zeissler, Richard Mark Lindstrom, J P McKinley
Abstract: We have been exploring ways to evaluate the activity of radioactive particles that have been detected by phosphor plate digital autoradiography based on photostimulated luminescence (PSL). A PSL system with 25{mu} pixel digitization has been applied ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831184

314. Surface Analysis Studies of Yield Enhancements in Secondary Ion Mass Spectrometry by Polyatomic Projectiles
Topic: Nanotechnology
Published: 5/1/2001
Authors: E Fuoco, John G Gillen, M Wijesundara, William E Wallace III, L Hanley
Abstract: In this paper examine the mechanism of secondary ion yield enhancements previously observed for polyatomic projectiles by measuring the weight loss, volume loss, and surface composition of poly(methylmethacrylate) (PMMA) films sputtered by keV SF^d5^ ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831207

315. Negative Cesium Sputter Ion Source for Generating Cluster Primary Ion Beams for Secondary Ion Mass Spectrometry Analysis
Topic: Nanotechnology
Published: 4/1/2001
Authors: John G Gillen, R Lance King, B Freibaum, R Lareau, J Bennett, F Chmara
Abstract: The use of a cluster (or polyatomic) primary ion projectile for organic SIMS has been demonstrated to increase the yield of characteristic molecular secondary ions, more efficiently desorb higher molecular weight species and reduce the accumulation o ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831137

316. Block Copolymer Thin Films: Physics and Applications
Topic: Nanotechnology
Published: 2/15/2001
Authors: Michael J Fasolka, A M Mayes
Abstract: A two-part review of research concerning block copolymer thin films is presented. The first section summarizes experimental and theoretical studies of the fundamental physics of these systems, concentrating upon the forces that govern film morpholog ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=841503

317. Fabrication and Electron Microprobe Characterization of Barium-Strontium-Titanate (BST) Films
Topic: Nanotechnology
Published: 2/1/2001
Authors: Ryna B. Marinenko, J T. Armstrong, Debra L Kaiser, Joseph J. Ritter, Peter K. Schenck, C P. Bouldin, J Blendell, Igor Levin
Abstract: Barium strontium titanate (BST) thin films of varying composition and thickness (5nm to 400nm) on (100)Si or Pt/(100)Si substrates were measured using an electron microprobe analyzer with wavelength dispersive x-ray spectrometers. Most of the films ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831201

318. Cluster Primary Ion Beam Secondary Ion Mass Spectrometry for Semiconductor Characterization
Topic: Nanotechnology
Published: 1/1/2001
Authors: John G Gillen, S V. Roberson, Albert J. Fahey, Marlon L Walker, J Bennett, R Lareau
Abstract: We are evaluating the use of polyatomic and cluster primary ion beams for characterization of semiconductor materials by secondary ion mass spectrometry using both magnetic sector and time-of-flight SIMS instruments. Primary ion beams of SF^d5^+, ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831200

319. P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy
Topic: Nanotechnology
Published: 1/1/2001
Authors: David S Simons, P Chi, S L Rommel, T E Dillon, K D Hobart, P E Thompson, P R Berger
Abstract: Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type {delta}-doped injectors separated by an ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831189

320. Preparation and Certification of K-411 Glass Microspheres
Topic: Nanotechnology
Published: 12/1/2000
Authors: Ryna B. Marinenko, S V. Roberson, J S Small, Barbara B. Thorne, Douglas H. Blackburn, D Kauffman, Stefan D Leigh
Abstract: The production and characterization of NBS K-411 glass microspheres in the 3-40 um range for certification as a NIST Standard Reference Material (SRM) are described. EDS quantitative analysis and heterogeneity evaluations of the microspheres were ma ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=831165



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