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Topic Area: Manufacturing

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Displaying records 961 to 970 of 1000 records.
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961. Uncertainty Analysis for Angle Calibrations Using Circle Closure
Series: Journal of Research (NIST JRES)
Topic: Manufacturing
Published: 3/1/1998
Author: William Tyler Estler
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=823098

962. Uncertainty Analysis for Angle Calibrations Using Circle Closure
Topic: Manufacturing
Published: 3/1/1998
Author: William Tyler Estler
Abstract: We analyze two types of full-circle angle calibrations: a simple closure in which a single set of unknown angular segments is sequentially compared with an unknown reference angle, and a dual closure in which two divided circles are simultaneously ca ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820892

963. Growth and Analysis of Near Ideal Thin Films and Multilayers
Topic: Manufacturing
Published: 2/18/1998
Authors: J Pedulla, R Deslattes, S Owens
Abstract: As thin film technology moves into the truly nano-scale region [<10 nm], many conventional methods of growth and analysis of thin films and multilayers break down due to large levels of interfacial roughness and diffusion, or incompatibility of the a ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=822528

964. Performing Measurement of Surface Structures With the Calibrated Atomic Force Microscope
Topic: Manufacturing
Published: 2/1/1998
Author: R Koning
Abstract: The use of the atomic force microscope (AFM) to characterize surface structures for industrial applications is rapidly increasing. To compare the results obtained by different instruments and to achieve high accuracy, the scales of an AFM must be cal ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820897

965. Metal-based Room-temperature Operating Single Electron Devices Using Scanning Probe Oxidation
Topic: Manufacturing
Published: 1/30/1998
Authors: K Matsumoto, Y Gotoh, T Maeda, John A. Dagata, J S Harris
Abstract: Coulomb oscillation was clearly observed at room temperature in the single electron transistor fabricated by atomic force microscopy (AFM) nano-oxidation process. In order to obtain a clear Coulomb oscillation at room temperature, new and improved fa ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821784

966. Advances in NIST Standard Rockwell Diamond Indenters
Topic: Manufacturing
Published: 1/1/1998
Authors: Jun-Feng Song, Samuel Rea Low III, David J Pitchure, Theodore Vincent Vorburger
Abstract: Recent developments in standard hardness machines and microform calibration techniques have made it possible to establish a worldwide unified Rockwell hardness scale with metrological traceability. This includes the establishments of the reference st ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=820911

967. An Integrated Approach to Optimal Three Dimensional Layout and Routing
Topic: Manufacturing
Published: 1/1/1998
Authors: Simon Szykman, J Cagan, P Weisser
Abstract: This paper describes the combination of previously-developed component placement and routing algorithms into an integrated computational approach to product layout optimization. Previous work introduced simulated annealing-based algorithms for opt ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821540

968. Characterization of Surface Topography
Topic: Manufacturing
Published: 1/1/1998
Authors: Theodore Vincent Vorburger, John A. Dagata, G. Wilkening, K Iizuka
Abstract: Abstract not available.
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=901983

969. Combining Interactive Exploration and Optimization for Assembly Design
Topic: Manufacturing
Published: 1/1/1998
Authors: Simon Szykman, Gerard Kim
Abstract: This paper presents an integrated framework for assembly design. The framework will allow the designer to represent knowledge about the design process and constraints as well as information about the artifact being designed, design history and ration ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821542

970. Electronic Properties of GaAs Surfaces Etched in an Electron Cyclotron Resonance Source and Chemically Passivated Using P2S5
Topic: Manufacturing
Published: 1/1/1998
Authors: O Glembocki, J Tuchman, John A. Dagata, K Ko, S Pang, C Stutz
Abstract: Photoreflectance has been used to study the electronic properties of (100) GaAs surfaces exposed to a Cl2/Ar plasma generated by an electron cyclotron resonance source and subsequently passivated by P2S5. The plasma etch shifts the Fermi level of p-G ...
http://www.nist.gov/manuscript-publication-search.cfm?pub_id=821782



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