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You searched on: Topic Area: Manufacturing

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Displaying records 961 to 970 of 1000 records.
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961. Stitching of Equatorial Profiles for Extended Spatial Range Assessment
Topic: Manufacturing
Published: 8/1/1996
Authors: P Sullivan, R E. Parks, Lianzhen Shao
Abstract: This paper describes a method for stitching multiple overlapping interferometric measurements of the equator of a high quality sphere to produce a single profile representing the roundness of the ball. The resulting optical profile measurement is com ...

962. An Approach to the Reduction of Hydrocarbon Contamination in the Scanning Electron Microscope
Topic: Manufacturing
Published: 6/1/1996
Author: Michael T Postek
Abstract: The deposition of electron bean-induced specimen contamination in both the transmission (TEM) and scanning electron microscopes (SEM) has remained a problem since the beginning of these forms of microscopy. Generally, sources of SEM contamination can ...

963. Modeling Spatial Reasoning Systems With Shape Algebras and Formal Logic
Topic: Manufacturing
Published: 6/1/1996
Author: Scott Chase
Abstract: The combination of the paradigms of shape algebras and predicate logic representations,used in a new method for describing designs, is presented. First order predicate logicprovides a natural, intuitive way of representing shapes and spatial relation ...

964. Calibration of Scanning Electron Microscope Magnification Standards SRM-484
Topic: Manufacturing
Published: 5/1/1996
Authors: Joseph Fu, Theodore Vincent Vorburger, D Ballard
Abstract: Standard Reference Material (SRM) 484 is an artifact for calibrating the magnification scale of a scanning electron microscope. Since 1977 the National Institute of Standards and Technology (NIST) has produced seven issues of SRM484 amounting to app ...

965. Electrical Test Structures Replicated in Silicon-On-Insulator Material
Topic: Manufacturing
Published: 5/1/1996
Authors: Michael W. Cresswell, J Sniegowski, Rathindra Ghoshtagore, Robert Allen, L Linholm, John S Villarrubia
Abstract: Measurements of the linewidths of submicrometer features made by different metrology techniques have frequently been characterized by differences of up to 90 nm. The purpose of the work reported here is to address the special difficulties that this p ...

966. High Accuracy Overlay Measurements
Topic: Manufacturing
Published: 5/1/1996
Authors: Richard M Silver, James Edward Potzick, Fredric Scire, Robert D. Larrabee
Abstract: The reduced critical dimensions of semiconductor devices place more stringent requirements on the precision and accuracy of overlay metrology tools used to monitor stepper feature placement. The use of mix and match stepper techniques and step and sc ...

967. High-Accuracy Critical-Dimension Metrology Using a Scanning Electron Microscope
Topic: Manufacturing
Published: 5/1/1996
Authors: J R. Lowney, Andras Vladar, Michael T Postek
Abstract: Two Monte Carlo computer codes have been written to simulate the transmitted-, backscattered-, and secondary-electron signals from targets in a scanning electron microscope. The first discussed, MONSEL-II, is applied to semi-infinite lines produced l ...

968. International Comparison of Photomask Linewidth Standards: U.S. (NIST) and U.K. (NPL)
Topic: Manufacturing
Published: 5/1/1996
Authors: James Edward Potzick, J Nunn
Abstract: Photomask linewidth standards serve as primary standards for the calibration of photomask metrology tools and are available from the national standards organizations of several countries. These standards are often in the form of chrome-on-quartz phot ...

969. Measurement of a CD and Sidewall Angle Artifact with Two Dimensional CD AFM Metrology
Topic: Manufacturing
Published: 5/1/1996
Authors: Ronald G Dixson, N. Sullivan, J Schneir, T Mcwaid, V W. Tsai, J Prochazka, M. Young
Abstract: Despite the widespread acceptance of SEM metrology in semiconductor manufacturing, there is no SEM CD standard currently available. Producing such a standard is challenging because SEM CD measurements are not only a function of the linewidth, but als ...

970. New Algorithm for the Measurement of Pitch in Metrology Instruments
Topic: Manufacturing
Published: 5/1/1996
Authors: Nien F Zhang, Michael T Postek, Robert D. Larrabee, L Carroll, William J. Keery
Abstract: Traditionally, the measurement of pitch in metrology instruments is thought to be a benign self-compensating function. However, as the measurement uncertainty of metrology instruments is pushed to the nanometer level, evaluation of the performance of ...

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