Campbell, J.
, Cheung, K.
, Drozdov, S.
, Southwick, R.
, Ryan, J.
, Oates, T.
and Suehle, J.
(2012),
Channel Length-Dependent Series Resistance?, 2012 Silicon Nanoelectronics Workshop, Honolulu, HI
(Accessed May 19, 2024)
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Channel Length-Dependent Series Resistance?
Published
Author(s)
, , Serghei Drozdov, , , Tony Oates,
Abstract
A recently developed series resistance (RSD) extraction procedure from a single nanoscale device is shown to be highly robust. Despite these virtues, the technique unexpectedly results in a channel length-dependent RSD which is observed across a wide range of channel lengths and across many different technologies (SiO2, SiON, and high-k) (see Figs. 1a-f). This observation obviously raises some concerning issues and implications as RSD is universally accepted as channel length-independent. However, careful examination of the RSD extraction procedure as well as comparison between RSD-corrected field effect mobility (uFE) and geometric magnetoresistance mobility (uMR) suggests that this unexpected observation may be valid.Conference Dates
June 10-11, 2012
Conference Location
Honolulu, HI
Conference Title
2012 Silicon Nanoelectronics Workshop
Pub Type
Conferences
Citation
Issues
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Created June 10, 2012, Updated February 19, 2017