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Search Publications by: Stephen Moxim (Fed)

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Displaying 1 - 4 of 4

Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications

April 16, 2024
Author(s)
Stephen Moxim, Nicholas Harmon, Kenneth Myers, James P Ashton, Elias Frantz, Michael Flatte, Patrick Lenahan, Jason Ryan
The near-zero-field magnetoresistance (NZFMR) response has proven to be a useful tool for studying atomic-scale, paramagnetic defects that are relevant to the reliability of semiconductor devices. The measurement is simple to make and, in some cases

Near Zero Field Magnetoresistance Spectroscopy: A New Tool in Semiconductor Reliability Physics

May 15, 2023
Author(s)
Patrick Lenahan, Elias Frantz, Sean King, Mark Anders, Stephen Moxim, James P Ashton, Kenneth Myers, Michael Flatte, Nicholas Harmon
A relatively simple addition to many widely utilized semiconductor device characterization techniques can allow one to identify much of the atomic scale structure of point defects which play important roles in the electronic properties of the devices under