TY  - GEN
AU  - Buehler, Martin G
C2  - , National Institute of Standards and Technology, Gaithersburg, MD
DA  - 1976-01-01 05:01:00
DO  - https://doi.org/10.6028/NBS.SP.400-22
LA  - en
PB  - , National Institute of Standards and Technology, Gaithersburg, MD
PY  - 1976
TI  - Microelectronic test pattern NBS-3 for evaluating the resistivity-dopant density relationship of silicon:
ER  -