TY  - JOUR
AU  - Zimmerman, Neil
AU  - Huber, W
AU  - Simonds, Brian
AU  - Hourdakis, Emmanouel
AU  - Fujiwara, Fujiwara
AU  - Ono, Yukinori
AU  - Takahashi, Yasuo
AU  - Inokawa, Hiroshi
AU  - Furlan, Miha
AU  - Keller, Mark
C2  - Journal of Applied Physics
DA  - 2008-08-07
DO  - https://doi.org/10.1063/1.2949700
LA  - en
M1  - 104
PB  - Journal of Applied Physics
PY  - 2008
TI  - Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability
ER  -