TY  - JOUR
AU  - Bertness, Kristine
AU  - Li, Wenjun
AU  - Brubaker, Matthew
AU  - Spann, Bryan
AU  - Fay, Patrick
C2  - IEEE Electron Device Letters
DA  - 2017-12-21
DO  - https://doi.org/10.1109/LED.2017.2785785
LA  - en
M1  - 49
PB  - IEEE Electron Device Letters
PY  - 2017
TI  - GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope
ER  -