TY  - JOUR
AU  - Ryu, Sei-Hyung
AU  - Krishnaswami, Sumi
AU  - O'Loughlin, Michael
AU  - Richmond, James
AU  - Agarwal, Anant
AU  - Palmour, John
AU  - Jr., Allen Hefner
C2  - IEEE Electron Device Letters
DA  - 2004-08-01 00:08:00
LA  - en
PB  - IEEE Electron Device Letters
PY  - 2004
TI  - 10 kV, 123 m {&#937;}-cm<sup>2</sup> 4H-SiC Power DMOSFETs
UR  - https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31865
ER  -