TY  - JOUR
AU  - Anders, Mark
AU  - Lenahan, Patrick
AU  - Edwards, Arthur
AU  - Schultz, Peter
AU  - Ginhoven, Renee Van
C2  - Journal of Applied Physics
DA  - 2018-11-13 05:11:00
DO  - https://doi.org/10.1063/1.5045668
LA  - en
M1  - 124
PB  - Journal of Applied Physics
PY  - 2018
TI  - Effects of Nitrogen on the Interface Density of States Distribution in 4H-SiC Metal Oxide Semiconductor Field Effect Transistors: Super-hyperfine Interactions and Near Interface Silicon Vacancy Energy Levels
ER  -