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Projects/Programs

Displaying 26 - 32 of 32
Images depicting an advanced analysis of HR-EBSD data

Strain Measurement for Semiconductor Devices and Packages

Ongoing
Strain is a critical parameter that influences both electrical and mechanical failures of devices, however, measuring strain in complex 3D geometries and vanishingly small feature sizes remains a challenge for manufacturers. Data provided by strain measurements can be used to validate computational
Microscopy standard linking critical dimensions of line-space arrays and frustum arrays of varying pitch, for hybrid metrology by optical microscopy, scanning electron microscopy,atomic force microscopy, and the NIST line-scale interferometer

Universal Microscopy Standards

Ongoing
Microscopy standards that are available today have inadequate performance characteristics. As device linewidths decrease toward physical limits, the international roadmap of devices and systems (IRDS) has set uncertainty targets by the year 2025. This target is hard to hit, challenging the industry