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Physical Measurement Laboratory / Applied Physics Division

Spin Electronics Group

Projects/Programs

Displaying 1 - 11 of 11
EUV graphs

Dynamic EUV Imaging and Spectroscopy for Microelectronics

Ongoing
Collaborations with industry leaders have led us to develop new measurement techniques to improve our understanding thermal transport, spin transport, and nanoscopic (and interfacial) material properties in active device structures. Such capability requires the ability to measure these properties at
Dynamic EUV Metrology of Nanoscopic Thermal Transport in Active Devices

Dynamic EUV Metrology of Nanoscopic Thermal Transport in Active Devices

Ongoing
Heat is greatly impeding progress in microelectronics, which is only getting worse as dimensions are reduced and device architectures move more towards being 3-dimensional. The dynamics and physics of nanoscale thermal transport are unknown and dynamic measurements of active devices at this scale do
circuit

Emerging Hardware for Artificial Intelligence

Ongoing
Here is a brief description of our work with links to recent papers from our investigations, broadly classified as experimental and modeling. A brief overview of Josephson junction-based bio-inspired computing can be found in our review article. Experimental We have facilities to develop our devices
Today, device performance needs to be evaluated to determine success of materials development. This project will advance metrology for magnetic materials and develop models to predict device performance.

High Speed Metrology for Magnetoelectronic Devices and Models

Ongoing
The U.S. Semiconductor industry is integrating ferromagnet-based microelectronic devices such as magnetic RAM (MRAM) into existing silicon-based technologies. MRAM has much shorter write times and higher write endurance than the embedded Flash currently used. These properties makes MRAM highly

Hybrid Ferromagnetic-Superconductor Memory

Ongoing
The core of the research program is to understand how the transit of a supercurrent through a series of ferromagnetic films affects both its amplitude, phase, and spin state, which can result from magnetic fields within the element, interfacial spin-filtering effects, and exchange interactions
decorative image

Hybrid Ferromagnetic-Superconductor Systems

Ongoing
The main goal of the research program is to develop and understand the physics of systems in which a ferromagnet is strongly interacting with (i.e., coupled to) microwave and optical photons. When these measurements are performed using microfabricated resonators, they represent a novel metrology to

Ion Traps

Ongoing
Trapped ions are sensitive to electric-field noise from trap-electrode surfaces. This noise has been an obstacle to progress in trapped-ion quantum information processing (QIP) experiments for more than a decade. It causes motional heating of the ions, and thus quantum-state decoherence. This

Magnetic Random Access Memory

Ongoing
Focus areas include (1) the fundamental understanding of the interactions between spin and magnetic materials and materials with large spin-orbit scattering; (2) the nonlinear dynamics of both individual and interacting nanoscale magnetic systems; and (3) the role of thermal noise in nanomagnetic
Detection Circuit and Layout of STO Chip

Neuromorphic Computing

Ongoing
Spin Torque Oscillators: The research at the heart of this effort is to better understand and control mutual synchronization of arrays of spintronic nanoscale oscillators operating in the range of 10 GHz to 40 GHz. The devices under study are well suited to neuromorphic applications because they are
micro-focus Brillouin Light scattering spectrometer

Optical and Microwave Spectroscopy of Microelectronic Systems

Ongoing
Collaborations with industry leaders have led to new understanding of magnetic damping in advanced materials and replication of our magnetic metrology tools. We investigate fundamental aspects of spin transfer in materials and structures that offer improved performance in future devices such as
Fig. 1. Die containing 285 superparamagnetic tunnel junctions.

Spintronics for Neuromorphic Computing

Ongoing
Magnetic tunnel junctions (see Fig. 1) consist of two thin films of ferromagnetic material separated by a few atomic layers of an insulating material. The insulator is so thin that electrons can tunnel quantum mechanically through it. The rate at which the electrons tunnel is affected by the