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Physical Measurement Laboratory / Nanoscale Device Characterization Division

Atom Scale Device Group

Projects/Programs

Displaying 1 - 7 of 7
STM patterning at 4K.

Atom-based Silicon Quantum Electronics

Ongoing
This project is developing atomically precise, atom-based electronic devices for use in quantum information processing and analog quantum simulation. We are developing the fabrication, measurement, and modeling methods needed to realize single atom, spin-based qubits in silicon as an integrated
joint quantum institute

Designing the Nanoworld: Nanostructure, Nanodevices, and Nano-optics

Ongoing
Developing and exploiting nanodevices for quantum and nanotechnologies requires nanoscale and atomic scale modeling of ultrasmall structures, devices, their operation, and their response to probes. Key challenges of understanding physics at the quantum/classical interface and measurement at the
STM image of a 28-Si film deposited onto a Si/100 substrate

Enriched Silicon and Devices for Quantum Information

Ongoing
Enriching silicon from 5% to <1 ppm 29Si Groundbreaking work around the world has realized qubits in silicon using metal-oxide-semiconductor (MOS) devices, single atomic dopants/defects and SiGe heterostructures, and, in all cases, the qubit coherence and fidelity properties are improved when using
A 3" wafer is seen concentric with the lower plasma electrode.

Precision Materials for Quantum Devices

Ongoing
MBE System Our fabrication system is composed of ultra-high vacuum (UHV) chambers that support the in-vacuum exchange of 75 mm wafers without exposure to air as seen in Figure 1. These chambers are: (1) a deposition chamber with electron gun deposition, UHV compatible sputter guns, in situ shadow
bilayer graphene graph

Si-Based Single Spin/Single Photon Measurement, Coherence and Manipulation

Ongoing
Devices based on moving and controlling single electrons offer the tantalizing possibility of achieving quantum information processing by virtue of their spin or charge coherent properties. We are pursuing CMOS-compatible Si-based quantum dots for a variety of goals, including:” Narrowband high-MHz
single electron devices

Silicon-based single electron current standards

Ongoing
Our devices can manipulate and trap a single electron in a quantum dot through the application of voltages to electrostatically controlled tunnel barriers. By cycling these voltages appropriately, we are able to sequentially pump one electron at a time through the device. To produce a current