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Richard M. Silver (Fed)

Richard Silver is an experimental physicist at the National Institute for Standards and Technology (NIST) in the Atom Scale Device Group. He leads an effort to develop atomically precise device fabrication and metrology methods for atom-based Si electronic devices.  Hydrogen-based scanning probe lithography is used to deterministically place individual dopant atoms in the Si lattice. Research is focused on developing atomic fabrication, device design, and low-temperature measurements for solid-state qubits, analog quantum simulation, synthetic quantum materials, and quantum metrology. He has carried out ground-breaking analog quantum simulations of many-body physics with dopant-based arrays. Recently, analog quantum simulations with dopant electrons coupled to dopant nuclear spins were started to explore lattice gauge theories that are expected to provide a fundamental theory of matter.

He has also had extensive interactions with the semiconductor industry, focusing on optical column design, hardware control, statistics, and electromagnetic modeling in support of semiconductor metrology.  Scientific and industrial impacts include scatterfield microscopy, hybrid metrology, optical Fourier normalization, structured illumination for defect inspection and overlay, advanced optical simulation, and sub-15 nm optical imaging.  This project is a leading effort in high-resolution optical imaging and deep sub-wavelength optical metrology. 

Richard Silver received a B.A. In Physics from the University of California, Berkeley and a Ph.D. in Physics from the University of Texas, Austin. He is an Adjunct Professor of Physics at the University of Maryland.
 

Projects

Atom-based Silicon Quantum Electronics

Publications

DC to GHz measurements of a near-ideal 2D material: P+ monolayers

Author(s)
Neil M. Zimmerman, Antonio Levy, Pradeep Namboodiri, Joshua M. Pomeroy, Xiqiao Wang, Joseph Fox, Richard M. Silver
P+ monolayers in Si are of great scientific and technological interest, both intrinsically as a material in the "ideal vacuum" of crystalline Si, and because

Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy

Author(s)
Pradeep Namboodiri, Jonathan Wyrick, Gheorghe Stan, Xiqiao Wang, Fan Fei, Ranjit Kashid, Scott Schmucker, Richard Kasica, Bryan Barnes, Michael Stewart, Richard M. Silver
Fabrication of quantum devices by atomic scale patterning with a Scanning Tunneling Microscope (STM) has led to the development of single/few atom transistors
Created October 9, 2019, Updated February 7, 2025