Tam Duong

Mr. Duong is an electrical engineer in the Quantum Measurement Division of the Physical Measurement Laboratory (PML) at the National Institute of Standards and Technology (NIST). His research interests include (1) characterization, modeling, and simulation of power devices and (2) modeling, simulation, and design of power electronics circuits.

Selected Publications

Electro-Thermal Simulation of a 100 A, 10 kV Half-Bridge SiC MOSFET/JBS Power Module

June 13, 2008

Author(s)

Tam H. Duong, Jose M. Ortiz, R. N. Raju, Allen R. Hefner Jr.

This paper presents the results from a parametric simulation study that was conducted to optimize the performance of 100 A, 10 kV, 20 kHz half-bridge SiC MOSFET

Circuit Simulation Model for a 100 A, 10 kV Half-bridge SiC MOSFET/JBS Power Module

February 24, 2008

Author(s)

Tam H. Duong, Angel Rivera-Lopez, Allen R. Hefner Jr., Jose M. Ortiz

This paper presents the simulation of a 100 A, 10 kV Silicon Carbide (SiC) half-bridge power module operating at 20 kHz in a behavioral boost converter circuit

Long-Term Stability Test System for High-Voltage, High-Frequency SiC Power Devices

February 25, 2007

Author(s)

Tam H. Duong, David Berning, Allen R. Hefner Jr., Keyue M. Smedley

This paper presents test system developed for long-term stability characterization of 10 kV Silicon Carbide (SiC) power MOSFETs and SiC diodes under 20 kHz hard

Publications

Design Optimization of Hybrid-Switch Soft-Switching Inverters using Multi-Scale Electro-Thermal Simulation

February 16, 2016

Author(s)

Jose M. Ortiz, Tam H. Duong, Allen R. Hefner Jr., Jih-Sheng Lai

A multi-scale electro-thermal simulation approach is presented to optimize the design of a hybrid switch soft-switching inverter using a library of dynamic

Electro-thermal Simulation of 1200 V 4H-SiC MOSFET Short-Circuit SOA

May 10, 2015

Author(s)

Tam H. Duong, Jose M. Ortiz, David W. Berning, Allen R. Hefner Jr., Sei-Hyung Ryu, John W. Palmour

The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area

Physics-based Electro-thermal Saber Model and Parameter Extraction for High-Voltage SiC Buffer IGBTs

September 15, 2014

Author(s)

Tam H. Duong, Allen R. Hefner Jr., Jose M. Ortiz, Sei-Hyung Ryu , Edward VanBrunt, Lin Cheng, Scott Allen, John W. Palmour

The purpose of this paper is to present a physics-based electro-thermal Saber model and parameter extraction sequence for high-voltage SiC buffer layer n

Electro-Thermal Simulation and Design of a 60 A, 4.5 kV Half-Bridge Si IGBT/SiC JBS Hybrid Power Module

September 15, 2012

Author(s)

Tam H. Duong, Allen R. Hefner Jr., Karl Hobart

This paper presents the results from a parametric simulation study that was conducted to optimize the design of a high-current 4.5 kV half-bridge Si-IGBT/SiC

Performance of Hybrid 4.5kV SiC JBS Freewheeling Diode and Si IGBT

September 16, 2011

Author(s)

Karl Hobart, Eugene Imhoff, F. J. Kub, Allen R. Hefner Jr., Tam H. Duong, Jose M. Ortiz, Sei-Hyung Ryu, David Grider, Scott G. Leslie, Jerry Sherbondy, B Ray

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Tam Duong (Fed)

Selected Publications

Publications