Matsuda, A.
, Ryan, J.
, Campbell, J.
and Cheung, K.
(2015),
Interface-State Capture Kinetics by Variable Duty Cycle Charge Pumping, Solid State Electronics
(Accessed January 28, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Interface-State Capture Kinetics by Variable Duty Cycle Charge Pumping
Published
Author(s)
, , ,
Abstract
We demonstrated a new variant of the charge-pumping technique featuring varying duty cycle gate pulses to directly probe the interface-state carrier capture process in the time domain. This technique retains the exceptional sensitivity of charge pumping while adding the ability to probe capture kinetics down to sub-nanoseconds. We further demonstrated that the capture kinetics can be analyzed using the transition-state theory. The key advantage of this approach is the complete absence of fudge factor such as capture cross section. Everything is based on simple physics. With proper accounting of the carrier concentration and quantum confinement effect, the extracted interface-state energy distribution is in good agreement with the result obtained from steady-state spectroscopic charge pumping technique. This agreement verifies the transition-state theory approach.Citation
Solid State Electronics
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created April 27, 2015, Updated October 4, 2017