Wahlstrand, J.
and Heilweil, E.
(2018),
Contactless THz-based bulk semiconductor mobility measurements using two-photon excitation, Optics Express, [online], https://doi.org/10.1364/OE.26.029848
(Accessed December 26, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Contactless THz-based bulk semiconductor mobility measurements using two-photon excitation
Published
Author(s)
,
Abstract
We perform contactless mobility measurements in ZnSe, ZnTe, GaP, CdS, and GaSe in an optical pump, THz probe experiment. By using two-photon excitation, one excites the entire sample thickness to produce measurable signals at 1013 carriers/cm3 or higher densities. For ZnTe and GaSe samples, the mobility measured using two-photon excitation is higher than that measured with one-photon excitation.Citation
Optics Express
Volume
26
Issue
23
Pub Type
Journals
Download Paper
Keywords
bulk semiconductors, mobility, terahertz, two-photon excitation
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created October 30, 2018, Updated October 12, 2021