Cheung, K.
(2018),
SiC power MOSFET gate oxide breakdown reliability – Current status, 2018 IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, [online], https://doi.org/10.1109/IRPS.2018.8353545
(Accessed December 22, 2024)
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SiC power MOSFET gate oxide breakdown reliability Current status
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Abstract
SiC power MOSFET is poised to take off commercially. Gate oxide breakdown reliability is an important obstacle standing is the way. Early prediction of poor intrinsic reliability comparing to silicon MOSFET, while theoretically sound, has now proven way too pessimistic. Experimental data from good quality SiC MOSCAP turns out to have better breakdown lifetime than its silicon counterpart, based on data available in the literature. This surprising result is the consequence of improper extraction of intrinsic lifetime in the presence of extrinsic failures. Even though intrinsic lifetime is no longer an issue, SiC MOSFET gate oxide breakdown reliability is not out of the wood yet. This is because, for thick oxide, it is the extrinsic failure that determine lifetime, not intrinsic failure. Unfortunately, up to now there is no properly done study of SiC gate oxide extrinsic breakdown study reported in the literature.Proceedings Title
2018 IEEE International Reliability Physics Symposium (IRPS)
Conference Dates
March 11-15, 2018
Conference Location
Burlingame, CA
Conference Title
International Reliability Physics Symposium
Pub Type
Conferences
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Keywords
SiC, power MOSFET, TDDB, gate oxide, reliability
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Created May 3, 2018, Updated February 7, 2019