Long-term drift of Si-MOS quantum dots with intentional donor implants

Published

May 21, 2019

Author(s)

m rudolph, B Sarabi, Roy E. Murray, M Carroll, Neil M. Zimmerman

Abstract

Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. We study the low-frequency charge noise by charge o set drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics that are not dependent on the properties of the donor implants. The equilibrium charge noise indicates a 1=f noise dependence, and a noise strength as low as 1 eV= p Hz, comparable to that reported in more model GaAs and Si/SiGe systems (which have also not been implanted). Implanted qubits, therefore, can be fabricated without detrimental e ects on long-term drift or 1=f noise.

Citation

Scientific Reports

Volume

9

Issue

1

Pub Type

Journals

Download Paper

https://doi.org/10.1038/s41598-019-43995-w

Local Download

Keywords

silicon, charge offset drift

Citation

rudolph, M. , Sarabi, B. , Murray, R. , Carroll, M. and Zimmerman, N. (2019), Long-term drift of Si-MOS quantum dots with intentional donor implants, Scientific Reports, [online], https://doi.org/10.1038/s41598-019-43995-w, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=924400 (Accessed January 3, 2025)