Bertness, K.
, Brown, J.
, Baca, A.
and Bright, V.
(2012),
Controlled dielectrophoretic nanowire self-assembly using atomic layer deposition and suspended microfabricated electrodes, Nanotechnology, [online], https://doi.org/10.1088/0957-4484/23/24/245301
(Accessed December 26, 2024)
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Controlled dielectrophoretic nanowire self-assembly using atomic layer deposition and suspended microfabricated electrodes
Published
Author(s)
, Joseph J. Brown, Alicia I. Baca, Victor M. Bright
Abstract
Effects of design and materials on the dielectrophoretic self-assembly of individual gallium nitride nanowires (GaN NWs) onto microfabricated electrodes have been experimentally investigated. The use of TiO2 surface coating generated by atomic layer deposition (ALD) improves dielectrophoretic assembly yield of individual GaN nanowires on microfabricated structures by as much as 67%. With a titanium dioxide coating, individual nanowires were placed across suspended electrode pairs in 46% of tests (147 out of 320 total), versus 28% of tests (88 out of 320 total tests) that used uncoated GaN NWs. An additional result from these tests was that suspending the electrodes 2.75 υm above the substrate corresponded with up to 15.8% improvement in overall assembly yield over that of electrodes fabricated directly on the substrate.Citation
Nanotechnology
Volume
23
Issue
24
Pub Type
Journals
Download Paper
Keywords
dielectrophoresis, GaN nanowires, self-assembly
Citation
Issues
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Created May 28, 2012, Updated November 10, 2018