Campbell, J.
, Cheung, K.
and Oates, A.
(2013),
The Series Resistance Component of Hot Carrier Degradation in Ultra-Short Channel Devices, 2013 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Hsinchu, -1
(Accessed December 30, 2024)
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The Series Resistance Component of Hot Carrier Degradation in Ultra-Short Channel Devices
Published
Author(s)
, , Anthony Oates
Abstract
Our measurements reveal that, similar to much larger power device geometries, hot carrier degradation in ultra-short channel devices involves (1) presumably defect generation-based parametric shifts in threshold voltage/transconductance and (2) an enhancement in series resistance. We show that the series resistance component, which has been seemingly overlooked for ultra-short channel devices, cannot be ignored.Conference Dates
April 22-24, 2013
Conference Location
Hsinchu
Conference Title
2013 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)
Pub Type
Conferences
Citation
Issues
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Created April 22, 2013, Updated February 19, 2017