Bertness, K.
, Sanford, N.
and Davydov, A.
(2010),
The effect of growth orientation and diameter on the elasticity of GaN Nanowires - a combined insitu TEM and atomistic modeling investigation, Nano Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=906878
(Accessed December 26, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
The effect of growth orientation and diameter on the elasticity of GaN Nanowires - a combined insitu TEM and atomistic modeling investigation
Published
Author(s)
, ,
Abstract
We characterized the elastic properties of GaN nanowires grown along different crystallographic orientations. In situ transmission electron microscopy tensile tests were conducted using a MEMS-based nanoscale testing system. Complementary atomistic simulations were performed using density functional theory and molecular dynamics. Our work establishes that elasticity size dependence is limited to nanowires with diameters smaller than 20 nm. For larger diameters, the elastic modulus converges to the bulk values of 300 GPa for c-axis and 267 GPa for a- and m-axis.Citation
Nano Letters
Issue
11
Pub Type
Journals
Download Paper
Keywords
Gallium nitride nanowires, nanowire elastic modulus, in situ testing, first-principles calculations, molecular dynamics, size effect, surface reconstruction
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 19, 2010, Updated October 12, 2021