Cheung, K.
(2010),
On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing, VLSI-TSA, Shinchu, -1
(Accessed February 10, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
On the 60 mV/dec @300 K Limit for MOSFET Subthreshold Swing
Published
Author(s)
Abstract
The 60 mV/dec limit for subthreshold swing at 300K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-ofstates(DOS) of the source is highlighted. A scheme of engineering this DOS is proposed as a possible way to achieve subthreshold swing much lower than the 60 mV/dec value.Proceedings Title
VLSI-TSA
Conference Dates
April 26-28, 2010
Conference Location
Shinchu
Pub Type
Conferences
Keywords
STEEP, subthreshold, FET, Density of states
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created April 26, 2010, Updated February 19, 2017