High-speed switching and rotational dynamics in small magnetic thin-film devices

Published

January 1, 2003

Author(s)

Stephen E. Russek, Shehzaad F. Kaka, Robert McMichael, Michael J. Donahue

Abstract

The intent of this chapter is to review high frequency magnetic device measurements and modeling work at NIST which is being conducted to support the development of high-speed read sensors, magnetic random access memory, and magnetoelectronic applications (such as isolators and microwaves components). The chapter will concentrate on magnetoresistive devices, those devices whose resistance is a function of the magnetic state of the device, which can in turn be controlled by a magnetic filed. The low-frequency characteristics of magnetoresistive devices will be reviewed. Simulated high-frequency device dynamics, using single-domain and micromagnetic models, will be discussed. Next, high-speed measurements of magnetization rotation and switching in micrometer-size devices will be presented. The effects of thermal fluctuations and disorder on device dynamics will be examined, and high-frequency magnetic noise data will be presented. Finally, the need to understand and control high-frequency magnetic damping will be discussed, and a method for engineering high-frequency magnetization damping using rare-earth doping will be presented.

Citation

Spin Dynamics II

Volume

87*

Publisher Info

Spinger Verlag , Heidelberg, GE

Pub Type

Books

Download Paper

Local Download

Keywords

magnetodynamics, micromagnetic modeling, GMR, magnetic devices

Citation

Russek, S. , Kaka, S. , McMichael, R. and Donahue, M. (2003), High-speed switching and rotational dynamics in small magnetic thin-film devices, Spinger Verlag , Heidelberg, GE, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33121 (Accessed November 21, 2024)