Broadband impedance parameters of assymetric coupled CMOS interconnects: new closed-form expressions and comparison with measurements

Published

October 29, 2003

Author(s)

Amy Luoh, Uwe Arz, Hartmut Grabinski, Dylan Williams, Dave K. Walker, Andreas Weisshaar

Abstract

New broadband closed-form expressions for the frequency-dependent impedance parameters of asymmetric coupled coplanar interconnects on a conductive silicon substrate are developed. The closed-form expressions are based on a complex image approach to account for eddy-current loss in the substrate and incorporate the effect of substrate contacts in the ground lines. The closed-form expressions for asymmetric coupled interconnects fabricated in a CMOS process generally agree well with measurements. To further investigate small differences between the model and measurement results, the important of skin-and proximity-effect in the closely spaced conductors is also examined.

Proceedings Title

Electrical Performance of Electronic Packaging

Conference Dates

October 27-29, 2003

Conference Location

Princeton, NJ, US

Pub Type

Conferences

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Keywords

coupled line, differential transmission line, image, lossy substrate, silicon

Citation

Luoh, A. , Arz, U. , Grabinski, H. , Williams, D. , Walker, D. and Weisshaar, A. (2003), Broadband impedance parameters of assymetric coupled CMOS interconnects: new closed-form expressions and comparison with measurements, Electrical Performance of Electronic Packaging, Princeton, NJ, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31270 (Accessed October 16, 2025)