Dragoset, R.
, First, P.
, Stroscio, J.
, Pierce, D.
and Celotta, R.
(1989),
Characterization of Epitaxial Fe on GaAs(110) By Scanning Tunneling Microscopy, Materials Research Society Symposium, Pittsburgh, PA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=620330
(Accessed December 30, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Characterization of Epitaxial Fe on GaAs(110) By Scanning Tunneling Microscopy
Published
Author(s)
, P First, , ,
Abstract
Iron on GaAs(110) comprises an interesting system not only due to small lattice mismatch, 1.4%, but also because of the magnetic properties of the overlayer. In the present work, scanning tunneling microscopy (STM) was used to investigate bcc Fe films in the 0.1 Aring} to 20 Aring} thinkness range, grown at 300 K and 450 K substrate temperatures. STM images show Volmer-Weber growth with the formation of 3-D Fe islands20-30 Aring} in diameter for 0.1-1 Aring} deposition at 300 K, increasing to 40-50 Aring} for thicker films. Iron island sizes at low coverage and thin film roughness at higher coverages both show significant dependence upon growth temperature.Volume
151
Conference Dates
April 30-May 2, 1989
Conference Location
Pittsburgh, PA, US
Conference Title
Materials Research Society Symposium
Pub Type
Conferences
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 31, 1988, Updated October 12, 2021