Improved VO2 Microbolometers for Infrared Imaging: Operation on the Semiconducting-Metallic Phase Transition with Negative Electrothermal Feedback

Published

January 1, 1999

Author(s)

Carl D. Reintsema, Erich N. Grossman, Jonathan A. Koch

Abstract

We have investigated the performance of VO₂ microbolometers biased on the semiconducting-metal phase transition with negative electrothermal feedback. We deposited crystalline thin films of phase-pure VO₂, patterned these films into useful test structures, and evaluated the electrical and optical properties relevant to improved uncooled bolometric sensors. A novel ac biasing method allows for biasing of the devices on the hysteretic semiconducting-metallic phase transition near 60 0C. Two important advantages result from biasing in the phase transition: high sensitivity, and negative electrothermal feedback (ETF). Under these conditions improvements in speed and noise equivalent power (NEP) are expected. Modest improvements in noise performance and responsivity consistent with simulations were experimentally verified. Our results suggest a large potential performance adavntage over current uncolled vanadium oxide sensors which can be realized as either increased bandwidth (faster frame rates) or higher sensitivity.

Proceedings Title

Proc. Intl. Soc. for Optical Engineering (SPIE)

Volume

3698

Conference Dates

April 5-9, 1999

Conference Location

Orlando, FL

Conference Title

SPIE - The International Society for Optical Engineering

Pub Type

Conferences

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Keywords

electrothermal feedback, microbolometers, semiconductor-metal phase transition, thermal imaging, uncooled, vanadium oxide

Citation

Reintsema, C. , Grossman, E. and Koch, J. (1999), Improved VO₂ Microbolometers for Infrared Imaging: Operation on the Semiconducting-Metallic Phase Transition with Negative Electrothermal Feedback, Proc. Intl. Soc. for Optical Engineering (SPIE), Orlando, FL, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30050 (Accessed December 21, 2024)