Electron Backscatter Diffraction for Studies of Localized Deformation

Published

July 1, 2003

Author(s)

Roy H. Geiss, Alexana Roshko, Kristine A. Bertness, R R. Keller

Abstract

Electron backscatter diffraction (EBSD) was used to study localized deformation in two types ofconstrained-volume materials. We present a study of deformation in narrow aluminum interconnects afterlow frequency, AC cycling at high current density. Joule heating and differential thermal expansion causedcyclic thermal straining, resulting in thermomechanical fatigue. By quasi in-situ testing, we determined theevolution of the crystallography of all -rains and boundaries in the interconnect lines. The results allowedus to formulate a mechanistic understanding of the deformation process, including slip line formation andgrain growth. In a second study, we analyzed diffraction patterns from selectively oxidized, inultilayeredAlGaAs/GaAs structures. Elastic strains associated with the oxidation front in multilayered A]GaAs werecharacterized by EBSD. Pattern sharpness maps revealed the resulting strain field about the oxide crowthfront, which we compared with finite element simulations. Quantitative strain measurements were madecomparing measurements of band widths on processed images.

Citation

TMS Conference

Pub Type

Journals

Keywords

Al-Si interconnects, AlgaAs, backscattered electron diffraction, EBSD, electromigration, fatigue, interconnect reliability, strain measurement, thin films

Citation

Geiss, R. , Roshko, A. , Bertness, K. and Keller, R. (2003), Electron Backscatter Diffraction for Studies of Localized Deformation, TMS Conference (Accessed March 13, 2025)