Rozsa, K.
, Bano, G.
and Gallagher, A.
(2001),
The Location of Very Small Particles in Silane RF Discharge, IEEE Transactions on Plasma Science
(Accessed November 8, 2024)
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The Location of Very Small Particles in Silane RF Discharge
Published
Author(s)
K Rozsa, G Bano, Alan Gallagher
Abstract
The size and location of silicon particles that grow in a pure silane, capacitively coupled RF discharge, are measured by laser light scattering. The discharge conditions were similar to those typically used to produce amorphous silicon devices, except the temperatues is 300 K. At early discharge time, when the particles are small (D{difference} 15 nm), they are located at the middle of the discharge. The larger ones that occur at later discharge times form a double layer nearer the electrodes. Surprisingly, the particles are not concentrated at the region of brightest discharge-light, which represents the distribution of high-energy electrons. Yet as expected, the distribution of film deposition on the electrodes fits radical diffusion with a source proportional to light intensity. It is also shown, by tilting the substrate, that a small gradient in plasma potential can have a major effect on particle positions.Citation
IEEE Transactions on Plasma Science
Volume
29
Issue
No. 2
Pub Type
Journals
Keywords
amorphous silicon, discharges, particles, photovoltaics
Citation
Issues
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Created April 1, 2001, Updated February 17, 2017