Diaz, J.
, Jaskolski, W.
, Zielinski, M.
and Bryant, G.
(2021),
Pressure-Induced Optoelectronic Properties of InP Nanocrystals: Tight-Binding Approach, Physica Status Solidi
(Accessed March 14, 2025)
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Pressure-Induced Optoelectronic Properties of InP Nanocrystals: Tight-Binding Approach
Published
Author(s)
J G. Diaz, W Jaskolski, M Zielinski,
Abstract
An empirical tight-binding theory is used to investigate pressure effects on the electronic and optical properties of InP nanocrystals. For bulk InP, our model predicts the Gamma - X crossing of the conduction band minima at exactly the same lattice contraction as measured in the experiment. For small InP nanocrystals, the model correctly predicts the pressure dependence of the fundamental energy gap and luminescence intensity.Citation
Physica Status Solidi
Pub Type
Journals
Keywords
electronic structure, nanocrystal, pressure, quantum dot, strain
Citation
Issues
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Created October 12, 2021