The Use of an SF5+ Primary Ion Beam for Ultra Shallow Depth Profiling on an Ion Microscope SIMS Instrument

Published

October 16, 2008

Author(s)

J Greg Gillen, Marlon L. Walker, P E. Thompson, J Bennett

Abstract

A magnetic sector SIMS instrument has been fitted with a modified hot filament duoplasmatron ion source for generation of SF₅⁺ primary ion beams for SIMS depth profiling applications. The SF₅⁺ primary ion beam has been evaluated by depth profiling of several low energy boron ion implants, boron delta-doped structures and a Ni/Cr metal multilayer depth profiling standard reference material. Using 3.0 keV impact SF₅⁺ bombardment at a 52 degrees impact angle with oxygen flooding gives a trailing edge decay length (l/e) for the boron implants and delta-doped layers of 1.3 nm. Under the same conditions, O₂⁺ bombardment gives a trailing edge decay length (l/e) of 2.3 nm. The use of the SF₅⁺ beam without oxygen flooding gives a substantial increase in decay length that is related to the formation of ripples as determined by AFM. In the case of the Ni/Cr reference material, a significant reduction in sputter-induced topography is observed with SF₅⁺ bombardment.

Citation

Journal of Vacuum Science and Technology

Pub Type

Journals

Keywords

polyatomic primary ions, secondary ion mass spectrometry, sulfur hexafluoride, ultra shallow dopants

Citation

Gillen, J. , Walker, M. , Thompson, P. and Bennett, J. (2008), The Use of an SF5+ Primary Ion Beam for Ultra Shallow Depth Profiling on an Ion Microscope SIMS Instrument, Journal of Vacuum Science and Technology (Accessed July 17, 2024)