Overlay Metrology Simulations: Analytical and Experimental Validations

Published

May 1, 2003

Author(s)

Joel L. Seligson, B Golovanevsky, J M. Poplawski, M E. Adel, Richard M. Silver

Abstract

We have previously reported on an overlay metrology simulation platform, used for modeling both the effects of overlay metrology tool behavior and the impact of target design on the ultimate metrology performance. Since our last report, the simulations by comparing them to both analytical calculations and to experimental results. The analytical validation is based on the classical calculation of the diffraction of a polarized plane wave from a perfectly conducting half plane. For the experimental validation, we chose an etched silicon wafer manufactured by International SEMATECH (ISMT) and characterized at National Institute of Standards and Technology (NIST). The advantages of this wafer are its well known topography and its suite of different metrology targets. A good fit to both analytical and experimental results is demonstrated, attesting to the capabilities of our enhanced simulation platform. The results for both the analytical and experimental validations are presented.

Proceedings Title

Proceedings of SPIE on Metrology, Inspection, and Process Control for Microlithography XVII, Daniel J. Herr, Editor, May 2003

Volume

5038

Issue

Pt. 1

Conference Dates

February 24, 2003

Conference Location

Santa Clara, CA, USA

Conference Title

Overlay and Registration Metrology I

Pub Type

Conferences

Keywords

etched silicon wafer, maxwell calculations, metrology, modeling, optics, overlay, simulation

Citation

Seligson, J. , Golovanevsky, B. , Poplawski, J. , Adel, M. and Silver, R. (2003), Overlay Metrology Simulations: Analytical and Experimental Validations, Proceedings of SPIE on Metrology, Inspection, and Process Control for Microlithography XVII, Daniel J. Herr, Editor, May 2003, Santa Clara, CA, USA (Accessed December 26, 2024)