X-ray diffraction, photoluminescence and composition standards of compound semiconductors

Published

January 1, 2003

Author(s)

Alexana Roshko, Kristine A. Bertness, J T. Armstrong, Ryna B. Marinenko, Marc L. Salit, Lawrence H. Robins, Albert J. Paul, R J. Matyi

Abstract

Work is underway to develop composition standards and standardized assessment procedures for compound semiconductors. An AlGaAs composition standard with less than 2% uncertainty is being developed. The improved accuracy of this standard is being achieved by combining an array of analysis techniques, including RHEED, PL, EMPA and ICP-OES. A major part of the work has been quantification of the accuracy limits of each technique. The influence of peak fitting method, measurement temperature, and doping concentration on PL measurements of AlGaAs layers has been measured. Similar work is underway for PL analysis of InGaAsP and for XRD analysis of a wide variety of materials in order to develop standardized assessment procedures. An inter-laboratory comparison was made of XRD and PL measurements of InGaAsP layers. The study demonstrated that material nonuniformity dominated the variation in the XRD measurements; but the uniformity was sufficient to allow PL measurement variations to be assessed.

Citation

Physica Status Solidi

Volume

0

Issue

3

Pub Type

Journals

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Keywords

AlGaAs, AlGaAs SRM, composition standards, EMPA, ICP-OES, InGaAsP, photoluminescence, round robin, X-ray diffraction

Citation

Roshko, A. , Bertness, K. , Armstrong, J. , Marinenko, R. , Salit, M. , Robins, L. , Paul, A. and Matyi, R. (2003), X-ray diffraction, photoluminescence and composition standards of compound semiconductors, Physica Status Solidi, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=30117 (Accessed October 12, 2025)