Buh, G.
, Tran, C.
and Kopanski, J.
(2003),
PSPICE Analysis of the Scanning Capacitance Microscope Sensor, Proc., Seventh USJ, Santa Cruz, CA, USA
(Accessed March 13, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
PSPICE Analysis of the Scanning Capacitance Microscope Sensor
Published
Author(s)
, Chi Tran,
Abstract
A detailed analysis of the capacitance sensor from a scanning capacitance microscope (SCM) is presented. PSPICE circuit simulations are compared with experimental results. The general behavior of the SCM sensor and practical aspects of the sensor-tuning curve are described. It is found that a stray capacitance decreases the measurement sensitivity and causes the sensor high frequency voltage applied across the tip-sample to fall. We have also calculated and measured the delocalized dC/dV caused by stray capacitance, revealing that this background dC/dV must be accounted for in order to obtain the true localized dC/dV.Proceedings Title
Proc., Seventh USJ
Conference Dates
April 27-May 1, 2003
Conference Location
Santa Cruz, CA, USA
Conference Title
Seventh International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
Pub Type
Conferences
Keywords
doping profiles, PSPICE, scanning capacitance microscope, capacitance measurement
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created April 26, 2003, Updated October 12, 2021