Carrier Concentration Dependence of Scanning Capacitance Microscopy Signal in the Vicinity of P-N Junctions

Published

June 1, 1999

Author(s)

Joseph Kopanski, Jay F. Marchiando, Brian G. Rennex

Abstract

Scanning capacitance microscopy was used to image 1) boron dopant gradients in p-type silicon, and 2) identical boron dopant gradients in n-type silicon. The bias voltage dependence of the apparent p-n junction location in the SCM images was measured. The theoretic al bias voltage dependence of the apparent p-n junction location of the same structures was determined using a two-dimensional, numerical Poisson Equation solver. The simulations confirm that for equally-doped step junctions; the apparent junction coincides with the electrical junction when the bias voltage is midway between the voltage that produces the peak SCM response on the p-type side and the voltage that produces the peak response on the n-type side. This rule is only approximately true for asymmetrically doped junctions. We also specify the extent of the region on the junction high- and low-sides from which valid carrier profiles may be extracted with a simple model.

Proceedings Title

Proc., International Workshop on the Measurement and Characterization of Ultrashallow Doping Profiles in Semiconductors

Conference Dates

March 28-31, 1999

Conference Location

Research Triangle Park, NC, USA

Pub Type

Conferences

Keywords

carrier profiling, 2-d carrier profiling, junctions, profiling, scanning capacitance microscope, SCM

Citation

Kopanski, J. , Marchiando, J. and Rennex, B. (1999), Carrier Concentration Dependence of Scanning Capacitance Microscopy Signal in the Vicinity of P-N Junctions, Proc., International Workshop on the Measurement and Characterization of Ultrashallow Doping Profiles in Semiconductors, Research Triangle Park, NC, USA (Accessed April 3, 2025)