Ullmann, K.
, Su, M.
, Silverman, K.
, Berry, J.
, Harvey, T.
and Mirin, R.
(2004),
Photoluminescence from an Nd3+ doped AlGaAs semiconductor structure, Tech. Dig., Conf. on Lasers and Electro-Optics (CLEO), San Francisco, CA, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31561
(Accessed December 21, 2024)
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Photoluminescence from an Nd3+ doped AlGaAs semiconductor structure
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Abstract
We report room temperature photoluminescence from a Nd3+ doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd3+ ions.Proceedings Title
Tech. Dig., Conf. on Lasers and Electro-Optics (CLEO)
Conference Dates
May 16-21, 2004
Conference Location
San Francisco, CA, USA
Pub Type
Conferences
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Created May 15, 2004, Updated October 12, 2021